X-On Electronics has gained recognition as a prominent supplier of SI2319DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2319DS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2319DS-T1-GE3 VBsemi Elec

Name: SI2319DS-T1-GE3
Brand: VBsemi Elec
SKU: SI2319DST1GE3_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2319DS-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SI2319DS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	30V 5.6A 55mO@10V,4.4A 2.5W P Channel SOT-23-3 MOSFETs ROHS
Datasheet:	SI2319DS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1181 ea
Line Total: USD 0.59

Availability - 154
Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ: 5 Multiples: 5
Pack Size: 5

SI2319DS-T1-GE3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

154

Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ : 5
Multiples : 5

5 : USD 0.1181
50 : USD 0.0979
150 : USD 0.0878
500 : USD 0.0802
3000 : USD 0.0659
6000 : USD 0.0629

Specifications

Manufacturer
VBsemi Elec VBsemi Elec

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT23 - 3 SOT23 - 3

Brand Category
Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss
30 V 30 V

Continuous Drain Current Id
5.6 A 5.6 A

Drain Source On Resistance Rdson@Vgs Id
55 mOhms @10V , 4.4A 55 mOhms @10V , 4.4A

Power Dissipation Pd
2.5 W 2.5 W

Gate Threshold Voltage Vgsth@Id
2 V @250uA 2 V @250uA

Type
P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the SI2319DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2319DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2319DS-T1-GE3 is a P Channel MOSFETs made by VBsemi Elec and is manufactured in a SOT-23-3 package compliant with ROHS standards. It has an operating voltage of 30V and a current rating of 5.6A. Its maximum drain-source on resistance at 10V is 55mO and it can handle up to 4.4A with a maximum dissipation of 2.5W.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
154 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 5 Multiples : 5	5 : USD 0.1181 50 : USD 0.0979 150 : USD 0.0878 500 : USD 0.0802 3000 : USD 0.0659 6000 : USD 0.0629

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