X-On Electronics has gained recognition as a prominent supplier of SI2319DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2319DS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2319DS-T1-GE3 VBsemi Elec

Name: SI2319DS-T1-GE3
Brand: VBsemi Elec
SKU: SI2319DST1GE3_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2319DS-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SI2319DS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	30V 5.6A 55mO@10V,4.4A 2.5W P Channel SOT-23-3 MOSFETs ROHS
Datasheet:	SI2319DS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1556 ea
Line Total: USD 0.78

Availability - 150
Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ: 5 Multiples: 5
Pack Size: 5

SI2319DS-T1-GE3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

150

Ship by Fri. 14 Feb to Wed. 19 Feb

MOQ : 5
Multiples : 5

5 : USD 0.1556
50 : USD 0.1246
150 : USD 0.1092
500 : USD 0.0753
3000 : USD 0.0651
6000 : USD 0.0615

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT23 - 3 SOT23 - 3

Brand Category

Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss

30 V 30 V

Continuous Drain Current Id

5.6 A 5.6 A

Drain Source On Resistance Rdson@Vgs Id

55 mOhms @10V , 4.4A 55 mOhms @10V , 4.4A

Power Dissipation Pd

2.5 W 2.5 W

Gate Threshold Voltage Vgsth@Id

2 V @250uA 2 V @250uA

Type

P Channel P Channel

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We are delighted to provide the SI2319DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2319DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2319DS-T1-GE3 is a P Channel MOSFETs made by VBsemi Elec and is manufactured in a SOT-23-3 package compliant with ROHS standards. It has an operating voltage of 30V and a current rating of 5.6A. Its maximum drain-source on resistance at 10V is 55mO and it can handle up to 4.4A with a maximum dissipation of 2.5W.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
150 Ship by Fri. 14 Feb to Wed. 19 Feb MOQ : 5 Multiples : 5	5 : USD 0.1556 50 : USD 0.1246 150 : USD 0.1092 500 : USD 0.0753 3000 : USD 0.0651 6000 : USD 0.0615

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