X-On Electronics has gained recognition as a prominent supplier of SI2318DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2318DS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2318DS-T1-GE3 VBsemi Elec

Name: SI2318DS-T1-GE3
Brand: VBsemi Elec
SKU: SI2318DST1GE3_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2318DS-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SI2318DS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	30V 6.5A 1.7W 30mO@10V,3.2A N Channel SOT-23 MOSFETs ROHS
Datasheet:	SI2318DS-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.0602 ea
Line Total: USD 0.3

Availability - 471
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 5 Multiples: 5
Pack Size: 5

SI2318DS-T1-GE3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

471

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 5
Multiples : 5

5 : USD 0.0602
50 : USD 0.059
150 : USD 0.0583
500 : USD 0.0574

Specifications

Manufacturer
VBsemi Elec VBsemi Elec

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
SOT23 - 3 SOT23 - 3

Brand Category
Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss
30 V 30 V

Continuous Drain Current Id
6.5 A 6.5 A

Power Dissipation Pd
1.7 W 1.7 W

Drain Source On Resistance Rdson@Vgs Id
30 mOhms @10V , 3.2A 30 mOhms @10V , 3.2A

Gate Threshold Voltage Vgsth@Id
2 V @250uA 2 V @250uA

Type
N Channel N Channel

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We are delighted to provide the SI2318DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2318DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2318DS-T1-GE3 is a N Channel SOT-23 MOSFET manufactured by VBsemi Elec with a 30V, 6.5A, 1.7W, 30 mO @ 10V, 3.2A rating. It is suitable for low voltage, high volume applications and is compliant with RoHS regulations. It is capable of switching currents up to 3.2A, making it suitable for power switching and level shifting applications. It is also capable of withstanding high voltage and temperature ranges, making it an ideal choice for high frequency, high power applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
471 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 5 Multiples : 5	5 : USD 0.0602 50 : USD 0.059 150 : USD 0.0583 500 : USD 0.0574

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