X-On Electronics has gained recognition as a prominent supplier of SIR802DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR802DP-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR802DP-T1-GE3 VBsemi Elec

Name: SIR802DP-T1-GE3
Brand: VBsemi Elec
SKU: SIR802DPT1GE3_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

SIR802DP-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SIR802DP-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET DFN8(5X6) RoHS
Datasheet:	SIR802DP-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.9798 ea
Line Total: USD 0.98

Availability - 67
Ship by Wed. 05 Feb to Mon. 10 Feb

MOQ: 1 Multiples: 1
Pack Size: 1

SIR802DP-T1-GE3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

67

Ship by Wed. 05 Feb to Mon. 10 Feb

MOQ : 1
Multiples : 1

1 : USD 0.9798
10 : USD 0.9576
30 : USD 0.8103
100 : USD 0.7179

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

DFN8 (5X6) DFN8 (5X6)

Brand Category

Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss

30 V 30 V

Continuous Drain Current Id

100 A 100 A

Power Dissipation Pd

250 W 250 W

Drain Source On Resistance Rdson@Vgs Id

1.8 mOhms @10V , 32A 1.8 mOhms @10V , 32A

Gate Threshold Voltage Vgsth@Id

2.5 V @250uA 2.5 V @250uA

Type

N Channel N Channel

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We are delighted to provide the SIR802DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR802DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SIR802DP-T1-GE3 is an N-channel MOSFET with an integrated DFN8 (5X6) package. It is manufactured by VBsemi Elec and is RoHS compliant. This device is designed for high-speed switching applications. Its low gate charge and low on-resistance make it optimized for high-efficiency and low power losses in applications such as switching power converter topologies such as forward, fly back and boost. It also has a low maximum RDS(on) specification which allows for minimal power losses. This MOSFET is suitable for many applications and can handle a maximum drain-source voltage of 60V.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
67 Ship by Wed. 05 Feb to Mon. 10 Feb MOQ : 1 Multiples : 1	1 : USD 0.9798 10 : USD 0.9576 30 : USD 0.8103 100 : USD 0.7179

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