X-On Electronics has gained recognition as a prominent supplier of SIR802DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIR802DP-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIR802DP-T1-GE3 VBsemi Elec

SIR802DP-T1-GE3 electronic component of VBsemi Elec
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Part No.SIR802DP-T1-GE3
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: MOSFET DFN8(5X6) RoHS
Datasheet: SIR802DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7559 ea
Line Total: USD 0.76 
Availability - 70
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
70
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7559
10 : USD 0.7387
30 : USD 0.7293
100 : USD 0.7179

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
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We are delighted to provide the SIR802DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIR802DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SIR802DP-T1-GE3 is an N-channel MOSFET with an integrated DFN8 (5X6) package. It is manufactured by VBsemi Elec and is RoHS compliant. This device is designed for high-speed switching applications. Its low gate charge and low on-resistance make it optimized for high-efficiency and low power losses in applications such as switching power converter topologies such as forward, fly back and boost. It also has a low maximum RDS(on) specification which allows for minimal power losses. This MOSFET is suitable for many applications and can handle a maximum drain-source voltage of 60V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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