X-On Electronics has gained recognition as a prominent supplier of NDD05N50Z-1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDD05N50Z-1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDD05N50Z-1G ON Semiconductor

NDD05N50Z-1G electronic component of ON Semiconductor
NDD05N50Z-1G ON Semiconductor
NDD05N50Z-1G MOSFETs
NDD05N50Z-1G  Semiconductors

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See Product Specifications
Part No. NDD05N50Z-1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET IPAK 500V 5A 1.2OHM
Datasheet: NDD05N50Z-1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1002: USD 0.4065 ea
Line Total: USD 407.31 
Availability - 0
MOQ: 1002  Multiples: 1002
Pack Size: 1002
Availability Price Quantity
0
Ship by Fri. 14 Feb to Thu. 20 Feb
MOQ : 75
Multiples : 1
75 : USD 0.5834
150 : USD 0.4871
750 : USD 0.4645
1500 : USD 0.4588

0
Ship by Fri. 14 Feb to Thu. 20 Feb
MOQ : 1002
Multiples : 1002
1002 : USD 0.4065

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NDD05N50Z-1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDD05N50Z-1G and other electronic components in the MOSFETs category and beyond.

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NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 Features Low ON Resistance Low Gate Charge www.onsemi.com ESD DiodeProtected Gate 100% Avalanche Tested V R (MAX) 2.2 A 100% Rg Tested DSS DS(on) These Devices are PbFree, Halogen Free/BFR Free and are RoHS 500 V 1.5 Compliant NChannel ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C D (2) Rating Symbol NDF NDD Unit DraintoSource Voltage V 500 V DSS Continuous Drain Current R I 5.5 4.7 A JC D (Note 1) G (1) Continuous Drain Current I 3.5 3 A D R , T = 100C (Note 1) JC A Pulsed Drain Current, V 10 V I 20 19 A GS DM S (3) Power Dissipation R P 30 83 W JC D GatetoSource Voltage V 30 V GS Single Pulse Avalanche Energy, I = E 130 mJ D AS 5.0 A ESD (HBM) (JESD22A114) V 3000 V esd RMS Isolation Voltage (t = 0.3 sec., V 4500 V ISO R.H. 30%, T = 25C) (Figure 17) A Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns 1 2 Continuous Source Current I 5 A S 3 (Body Diode) NDF05N50ZG, Maximum Temperature for Soldering T 260 C L NDF05N50ZH Leads TO220FP CASE 221AH Operating Junction and T , T 55 to 150 C J stg Storage Temperature Range 4 Stresses exceeding those listed in the Maximum Ratings table may damage the 4 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2 1 1 2. I = 4.4 A, di/dt 100 A/ s, V BV , T = +150C S DD DSS J 2 3 3 NDD05N50ZT4G NDD05N50Z1G DPAK IPAK CASE 369AA CASE 369D ORDERING AND MARKING INFORMATION See detailed ordering, marking and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 NDF05N50Z/DNDF05N50Z, NDD05N50Z THERMAL RESISTANCE Parameter Symbol Value Unit JunctiontoCase (Drain) NDF05N50Z R 4.2 C/W JC NDD05N50Z 1.5 JunctiontoAmbient Steady State (Note 3) NDF05N50Z R 50 JA (Note 4) NDD05N50Z 38 (Note 3) NDD05N50Z1 80 3. Insertion mounted 4. Surface mounted on FR4 board using 1 sq. pad size, (Cu area = 1.127 in sq 2 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage BV V = 0 V, I = 1 mA 500 V DSS GS D Breakdown Voltage Temperature Co- BV / Reference to 25C, 0.6 V/C DSS efficient T I = 1 mA J D DraintoSource Leakage Current I 25C 1 A DSS V = 500 V, V = 0 V DS GS 150C 50 GatetoSource Forward Leakage I V = 20 V 10 A GSS GS ON CHARACTERISTICS (Note 5) Static DraintoSource R V = 10 V, I = 2.2 A 1.25 1.5 DS(on) GS D OnResistance Gate Threshold Voltage V V = V , I = 50 A 3.0 3.9 4.5 V GS(th) DS GS D Forward Transconductance g V = 15 V, I = 2.5 A 3.5 S FS DS D DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) C 421 530 632 pF iss Output Capacitance (Note 6) C 50 68 80 V = 25 V, V = 0 V, oss DS GS f = 1.0 MHz Reverse Transfer Capacitance C 8 15 25 rss (Note 6) nC Total Gate Charge (Note 6) Q 9 18.5 28 g GatetoSource Charge (Note 6) Q 2 4 6 gs V = 250 V, I = 5 A, DD D GatetoDrain (Miller) Charge Q 5 10 15 gd V = 10 V GS (Note 6) Plateau Voltage V 6.5 V GP Gate Resistance R 1.5 4.5 8 g RESISTIVE SWITCHING CHARACTERISTICS TurnOn Delay Time t 11 ns d(on) Rise Time t 15 r V = 250 V, I = 5 A, DD D V = 10 V, R = 5 GS G TurnOff Delay Time t 24 d(off) Fall Time t 14 f SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C unless otherwise noted) C Diode Forward Voltage V I = 5 A, V = 0 V 1.6 V SD S GS Reverse Recovery Time t 255 ns rr V = 0 V, V = 30 V GS DD I = 5 A, di/dt = 100 A/ s S Reverse Recovery Charge Q 1.25 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Width 380 s, Duty Cycle 2%. 6. Guaranteed by design. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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