X-On Electronics has gained recognition as a prominent supplier of SI2301CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2301CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2301CDS-T1-GE3 Vishay

SI2301CDS-T1-GE3 electronic component of Vishay
SI2301CDS-T1-GE3 Vishay
SI2301CDS-T1-GE3 MOSFETs
SI2301CDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2301CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -20V Vds 8V Vgs SOT-23
Datasheet: SI2301CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0961 ea
Line Total: USD 0.96 
Availability - 120910
Ship by Fri. 28 Feb to Wed. 05 Mar
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
1843
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 105
Multiples : 1
105 : USD 0.6218
164 : USD 0.3969
166 : USD 0.3918
235 : USD 0.2768
250 : USD 0.2739
500 : USD 0.2211
1000 : USD 0.157

2910
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1495
6000 : USD 0.1482
12000 : USD 0.1294

120910
Ship by Fri. 28 Feb to Wed. 05 Mar
MOQ : 10
Multiples : 10
10 : USD 0.0961
100 : USD 0.0758
300 : USD 0.0561
3000 : USD 0.0437
6000 : USD 0.0414
9000 : USD 0.04

142299
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 0.5287
10 : USD 0.3337
100 : USD 0.222
500 : USD 0.1771
1000 : USD 0.154
3000 : USD 0.1342
9000 : USD 0.1331
45000 : USD 0.1298

2556
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 0.392
10 : USD 0.3234
50 : USD 0.231
100 : USD 0.1946
126 : USD 0.1372

2910
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1707

1843
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 166
Multiples : 1
166 : USD 0.3918
235 : USD 0.2768
250 : USD 0.2739
500 : USD 0.2211
1000 : USD 0.157

26190
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1561
6000 : USD 0.15
12000 : USD 0.1304

2910
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1495
6000 : USD 0.1482
12000 : USD 0.1294

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI2301CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2301CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2301CDS-T1-GE3 is an enhancement mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Vishay. It has a 20-volt Drain-Source Voltage (Vds) rating and a 8-volt Gate-Source Voltage (Vgs) rating. The transistor is packaged in an ultra-small SOT-23 package, making it a good choice for applications where board space is a limited resource. The SI2301CDS-T1-GE3 has a maximum Id of -255mA, which makes it suitable for low power switching applications. This transistor has an RDS(on) of 1.8O, making it also suitable for low-power switching at higher frequencies. It’s low threshold voltage (Vth) of 1.6 volts makes it ideal for use in low-voltage, low-power switching applications. In addition, the device has an excellent thermal performance, which makes it suitable for high-frequency operation at elevated temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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