X-On Electronics has gained recognition as a prominent supplier of SI2301CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2301CDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2301CDS-T1-GE3 Vishay

SI2301CDS-T1-GE3 electronic component of Vishay
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Part No.SI2301CDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -20V Vds 8V Vgs SOT-23
Datasheet: SI2301CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0686 ea
Line Total: USD 0.69 
Availability - 76112
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 10  Multiples: 10
Pack Size: 10

 SI2301CDS-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
1891
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 10
Multiples : 1
10 : USD 0.5351
14 : USD 0.3836
25 : USD 0.3796
100 : USD 0.2496
250 : USD 0.247
500 : USD 0.184
1000 : USD 0.1233

8730
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1252
6000 : USD 0.1231
12000 : USD 0.121
15000 : USD 0.1204
45000 : USD 0.1165

76112
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0686
100 : USD 0.0555
300 : USD 0.0486
3000 : USD 0.0431
6000 : USD 0.0412
9000 : USD 0.04

145139
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4653
10 : USD 0.3179
100 : USD 0.2211
500 : USD 0.1771
1000 : USD 0.1639
3000 : USD 0.1463
9000 : USD 0.1364
24000 : USD 0.1331
45000 : USD 0.1298

8349
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.448
10 : USD 0.371
50 : USD 0.266
100 : USD 0.2254
112 : USD 0.154

5820
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1033

125130
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1992
66000 : USD 0.182
99000 : USD 0.1693

1891
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 62
Multiples : 1
62 : USD 0.1233

26190
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1052

5820
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1992

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2301CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2301CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2301CDS-T1-GE3 is an enhancement mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Vishay. It has a 20-volt Drain-Source Voltage (Vds) rating and a 8-volt Gate-Source Voltage (Vgs) rating. The transistor is packaged in an ultra-small SOT-23 package, making it a good choice for applications where board space is a limited resource. The SI2301CDS-T1-GE3 has a maximum Id of -255mA, which makes it suitable for low power switching applications. This transistor has an RDS(on) of 1.8O, making it also suitable for low-power switching at higher frequencies. It’s low threshold voltage (Vth) of 1.6 volts makes it ideal for use in low-voltage, low-power switching applications. In addition, the device has an excellent thermal performance, which makes it suitable for high-frequency operation at elevated temperatures.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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BC may also be referenced as

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HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
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Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
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Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
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Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
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VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
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