X-On Electronics has gained recognition as a prominent supplier of SI2301CDS-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI2301CDS-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI2301CDS-T1-GE3 Vishay

SI2301CDS-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI2301CDS-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET -20V Vds 8V Vgs SOT-23
Datasheet: SI2301CDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0969 ea
Line Total: USD 0.48

Availability - 110997
Ships to you between
Thu. 13 Jun to Tue. 18 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
750780 - WHS 1


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1088
9000 : USD 0.1088
12000 : USD 0.1088
30000 : USD 0.1088
45000 : USD 0.1088

23280 - WHS 2


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1227

951 - WHS 3


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5122
25 : USD 0.403
50 : USD 0.3263

110997 - WHS 4


Ships to you between
Thu. 13 Jun to Tue. 18 Jun

MOQ : 5
Multiples : 5
5 : USD 0.0969
50 : USD 0.079
150 : USD 0.0698
500 : USD 0.0622
3000 : USD 0.0595
6000 : USD 0.0578

169243 - WHS 5


Ships to you between Wed. 12 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.36
10 : USD 0.2806
100 : USD 0.1782
500 : USD 0.1679
1000 : USD 0.1368
3000 : USD 0.1323

7126 - WHS 6


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 5
Multiples : 1
5 : USD 0.2106
25 : USD 0.1833
100 : USD 0.1651
113 : USD 0.1482
310 : USD 0.1391

686760 - WHS 7


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.094

526710 - WHS 8


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.186
135000 : USD 0.1699
270000 : USD 0.1581
405000 : USD 0.1491

29100 - WHS 9


Ships to you between Thu. 06 Jun to Wed. 12 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.0955

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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We are delighted to provide the SI2301CDS-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2301CDS-T1-GE3 and other electronic components in the MOSFET category and beyond.

The SI2301CDS-T1-GE3 is an enhancement mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Vishay. It has a 20-volt Drain-Source Voltage (Vds) rating and a 8-volt Gate-Source Voltage (Vgs) rating. The transistor is packaged in an ultra-small SOT-23 package, making it a good choice for applications where board space is a limited resource. The SI2301CDS-T1-GE3 has a maximum Id of -255mA, which makes it suitable for low power switching applications. This transistor has an RDS(on) of 1.8O, making it also suitable for low-power switching at higher frequencies. It’s low threshold voltage (Vth) of 1.6 volts makes it ideal for use in low-voltage, low-power switching applications. In addition, the device has an excellent thermal performance, which makes it suitable for high-frequency operation at elevated temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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