Si2327DS Vishay Siliconix P-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 2.35 at V = - 10 V - 0.49 GS TrenchFET Power MOSFET - 200 8.0 2.45 at V = - 6.0 V - 0.48 GS Ultra Low On-Resistance Small Size APPLICATIONS Active Clamp Circuits in DC/DC Power Supplies TO-236 (SOT-23) G 1 3 D S 2 Top View Si2327DS (D7)* * Marking Code Ordering Information: Si2327DS -T1-E3 (Lead (Pb)-free) Si2327DS -T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 200 DS V Gate-Source Voltage V 20 GS T = 25 C - 0.49 - 0.38 A a, b I Continuous Drain Current (T = 150 C) D J T = 70 C - 0.39 - 0.31 A I Pulsed Drain Current - 1.0 A DM a, b I - 1.0 - 0.6 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I 4.0 AS L = 1.0 mH E Single Pulse Avalanche Energy 0.8 mJ AS T = 25 C 1.25 0.75 A a, b P W Maximum Power Dissipation D T = 70 C 0.8 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 75 100 a R Maximum Junction-to-Ambient thJA Steady State 120 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 40 50 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 73240 www.vishay.com S09-0133-Rev. B, 02-Feb-09 1Si2327DS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Parameter Symbol Test Conditions Unit Min. Typ. Max. Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 200 (BR)DSS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 2.5 - 4.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 200 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 200 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 15 V, V = 10 V - 1.0 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 0.5 A 1.9 2.35 GS D a R Drain-Source On-Resistance DS(on) V = - 6.0 V, I = - 0.5 A 1.96 2.45 GS D a g V = - 15 V, I = - 0.5 A 1.8 S Forward Transconductance fs DS D V I = - 1.0 A, V = 0 V Diode Forward Voltage - 0.85 - 1.2 V SD S GS b Dynamic Total Gate Charge Q 8.0 12 g V = - 100 V, V = 10 V DS GS Q Gate-Source Charge 1.3 nC gs I - 0.5 A D Gate-Drain Charge Q 2.5 gd R Gate Resistance f = 1.0 MHz 8.0 g C Input Capacitance 340 510 iss C V = - 25 V, V = 0 V, f = 1 MHz Output Capacitance 25 pF oss DS GS C Reverse Transfer Capacitance 14 rss c Switching t 812 d(on) Turn-On Time V = - 100 V, R = 100 DD L t 11 17 r I - 1.0 A, V = - 10 V ns D GEN t 16 25 d(off) R = 6 Turn-Off Time g t 11 17 f Q I = 0.5 A, dI/dt = 100 A/s Body Diode Reverse Recovery Charge 140 200 nC rr F Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73240 2 S09-0133-Rev. B, 02-Feb-09