IPL60R185CFD7 MOSFET ThinPAK 8x8 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. Resulting from reduced gate charge (Q ), best-in-class g reverse recovery charge (Q ) and improved turn off behavior CoolMOS rr CFD7 offers highest efficiency in resonant topologies. As part of Infineons fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density Drain Pin 5 solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler. Gate Pin 1 Driver Source Features Power Pin 2 Source Pin 3,4 Ultra-fast body diode Low gate charge Best-in-class reverse recovery charge (Q ) rr Improved MOSFET reverse diode dv/dt and di /dt ruggedness F Lowest FOM R *Q and R *E DS(on) g DS(on) oss Best-in-class RDS(on) in SMD and THD packages Benefits Excellent hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use / performance tradeoff Enabling increased power density solutions Potential applications Suiteable for Soft Switching topologies Optimized for phase-shift full-bridge (ZVS), LLC Applications Server, Telecom, EV Charging Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 185 m DS(on),max Qg,typ 28 nC ID,pulse 51 A E 400V 3.2 J oss Body diode di /dt 1300 A/s F Type / Ordering Code Package Marking Related Links IPL60R185CFD7 PG-VSON-4 60R185F7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2018-01-18600V CoolMOS CFD7 Power Transistor IPL60R185CFD7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2018-01-18