X-On Electronics has gained recognition as a prominent supplier of RJ1U330AAFRGTL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RJ1U330AAFRGTL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RJ1U330AAFRGTL ROHM

RJ1U330AAFRGTL electronic component of ROHM
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Part No.RJ1U330AAFRGTL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 250V Vds 33A 0.077Rds(on) 80Qg
Datasheet: RJ1U330AAFRGTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.002 ea
Line Total: USD 4 
Availability - 238
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
238
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 4.002
10 : USD 2.99
100 : USD 2.323
500 : USD 2.1275
1000 : USD 2.116

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RJ1U330AAFRGTL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJ1U330AAFRGTL and other electronic components in the MOSFETs category and beyond.

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RJ1U330AAFRGTL Datasheet Nch 250V/33A Power MOSFET llOutline TO-263 V 250V DSS SC-83 R (Max.) 105m DS(on) LPT(S) I 33A D P 211W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Basic ordering unit (pcs) 1000 Taping code TL Marking RJ1U330AA llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 Continuous drain current (T = 25C) I 33 A c D *2 I Pulsed drain current 132 A DP Gate - Source voltage V 30 V GSS *3 Avalanche current, single pulse I 16.5 A AS *3 E Avalanche energy, single pulse 74.8 mJ AS Power dissipation (T = 25C) P 211 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160909 - Rev.001 RJ1U330AAFRGTL Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 0.59 /W thJC *4 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 250 - - V (BR)DSS GS D voltage V = 250V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 1 A DSS j drain current T = 125C - - - j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3.0 - 5.0 V GS(th) DS D V = 10V, I = 16.5A GS D Static drain - source *5 R T = 25C - 77 105 m DS(on) j on - state resistance T = 125C - 165 - j Gate resistance R f = 1MHz, open drain - 3.0 - G www.rohm.com 2/11 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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