RJ1U330AAFRGTL ROHM

RJ1U330AAFRGTL Datasheet Nch 250V/33A Power MOSFET llOutline TO-263 V 250V DSS SC-83 R (Max.) 105m DS(on) LPT(S) I 33A D P 211W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Basic ordering unit (pcs) 1000 Taping code TL Marking RJ1U330AA llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 Continuous drain current (T = 25C) I 33 A c D *2 I Pulsed drain current 132 A DP Gate - Source voltage V 30 V GSS *3 Avalanche current, single pulse I 16.5 A AS *3 E Avalanche energy, single pulse 74.8 mJ AS Power dissipation (T = 25C) P 211 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160909 - Rev.001 RJ1U330AAFRGTL Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case R - - 0.59 /W thJC *4 R Thermal resistance, junction - ambient - - 80 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 250 - - V (BR)DSS GS D voltage V = 250V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 1 A DSS j drain current T = 125C - - - j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 3.0 - 5.0 V GS(th) DS D V = 10V, I = 16.5A GS D Static drain - source *5 R T = 25C - 77 105 m DS(on) j on - state resistance T = 125C - 165 - j Gate resistance R f = 1MHz, open drain - 3.0 - G www.rohm.com 2/11 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.