Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (mA) DS DS(on) D Definition 0.70 at V = 4.5 V 600 GS TrenchFET Power MOSFETs 0.85 at V = 2.5 V 500 N-Channel 20 2000 V ESD Protection GS Very Small Footprint 1.25 at V = 1.8 V 350 GS High-Side Switching 1.2 at V = - 4.5 V - 400 GS Low On-Resistance: 1.6 at V = - 2.5 V - 300 P-Channel - 20 N-Channel, 0.7 GS P-Channel, 1.2 2.7 at V = - 1.8 V - 150 GS Low Threshold: 0.8 V (Typ.) Fast Switching Speed: 14 ns 1.8 V Operation Compliant to RoHS Directive 2002/95/EC BENEFITS SOT -563 Ease in Driving Switches SC-89 Low Offset (Error) Voltage Low-Voltage Operation S 1 6 D 1 1 High-Speed Circuits Low Battery Voltage Operation G 1 2 5 G Marking Code: A 2 APPLICATIONS Replace Digital Transistor, Level-Shifter D 3 4 S 2 2 Battery Operated Systems Power Supply Converter Circuits T op V iew Ordering Information: Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Unit V 20 - 20 Drain-Source Voltage DS V Gate-Source Voltage V 6 GS T = 25 C 515 485 - 390 - 370 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 370 350 - 280 - 265 A mA b I 650 - 650 Pulsed Drain Current DM a I 450 380 - 450 - 380 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 280 250 A a Maximum Power Dissipation P mW D T = 85 C 145 130 145 130 A T , T - 55 to 150 C Operating Junction and Storage Temperature Range J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71168 www.vishay.com S10-2432-Rev. E, 25-Oct-10 1Si1016X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V I = 250 A 0.45 1 N-Ch DS GS, D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A - 0.45 - 1 P-Ch DS GS D N-Ch 0.5 1.0 Gate Body Leakage I V = 0 V, V = 4.5 V A GSS DS GS P-Ch 1.0 2.0 V = 16 V, V = 0 V 0.3 100 N-Ch DS GS nA V = - 16 V, V = 0 V - 0.3 - 100 P-Ch Zero Gate Voltage Drain DS GS I DSS Current V = 16 V, V = 0 V, T = 85 C 5 N-Ch DS GS J A V = - 16 V, V = 0 V, T = 85 C - 5 P-Ch DS GS J V = 5 V, V = 4.5 V 700 N-Ch DS GS a I On State Drain Current mA D(on) V = - 5 V, V = - 4.5 V P-Ch - 700 DS GS V = 4.5 V, I = 600 mA 0.41 0.70 N-Ch GS D V = - 4.5 V, I = - 350 mA P-Ch 0.80 1.2 GS D V = 2.5 V, I = 500 mA 0.53 0.85 N-Ch GS D Drain-Source On-State R a DS(on) Resistance V = - 2.5 V, I = - 300 mA P-Ch 1.20 1.6 GS D V = 1.8 V, I = 350 mA 0.70 1.25 N-Ch GS D V = - 1.8 V, I = - 150 mA 1.80 2.7 P-Ch GS D V = 10 V, I = 400 mA 1.0 N-Ch DS D a Forward Transconductance g S fs V = - 10 V, I = - 250 mA 0.4 P-Ch DS D I = 150 mA, V = 0 V 0.8 1.2 N-Ch S GS a Diode Forward Voltage V V SD I = - 150 mA, V = 0 V - 0.8 - 1.2 P-Ch S GS b Dynamic N-Ch 750 Total Gate Charge Q g P-Ch 1500 N-Channel V = 10 V, V = 4.5 V, I = 250 mA N-Ch 75 DS GS D Gate-Source Charge Q pC gs P-Channel P-Ch 150 V = - 10 V, V = - 4.5 V, I = - 250 mA DS GS D N-Ch 225 Gate-Drain Charge Q gd P-Ch 450 N-Channel N-Ch 5 Turn-On Time t ON V = 10 V, R = 47 DD L P-Ch 5 I 200 mA, V = 4.5 V, R = 10 D GEN g ns P-Channel N-Ch 25 Turn-Off Time t OFF V = - 10 V, R = 47 DD L P-Ch 35 I - 200 mA, V = - 4.5 V, R = 10 D GEN g Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71168 2 S10-2432-Rev. E, 25-Oct-10