Si1025X Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()V (V) I (mA) DS (min) DS(on) GS(th) D Definition 4 at V = - 10 V - 60 - 1 to - 3.0 - 500 GS TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.) Low Input Capacitance: 23 pF (typ.) Miniature Package Gate-Source ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC SC-89 BENEFITS S 1 6 D 1 1 Ease in Driving Switches Low Offset Voltage G 2 5 G Marking Code: D 1 2 Low-Voltage Operation High-Speed Circuits D 3 4 S 2 2 Easily Driven Without Buffer Small Board Area Top View APPLICATIONS Ordering Information: Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors etc. Battery Operated Systems Power Supply Converter Circuits Solid State Relays ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 60 DS V V Gate-Source Voltage 20 GS T = 25 C - 200 - 190 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 145 - 135 A mA b I - 650 Pulsed Drain Current DM a I - 450 - 380 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 A a P mW Maximum Power Dissipation D T = 85 C 145 130 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71433 www.vishay.com S10-2432-Rev. C, 25-Oct-10 1Si1025X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 10 A Drain-Source Breakdown Voltage - 60 DS GS D V V V = V , I = - 0.25 mA Gate Threshold Voltage - 1 - 3.0 GS(th) DS GS D V = 0 V, V = 10 V 200 DS GS I Gate-Body Leakage GSS V = 0 V, V = 5 V 100 DS GS nA V = - 50 V, V = 0 V - 25 DS GS I Zero Gate Voltage Drain Current DSS V = - 50 V, V = 0 V, T = 85 C - 250 DS GS J V = - 10 V, V = - 4.5 V - 50 DS GS a I mA On-State Drain Current D(on) V = - 10 V, V = - 10 V - 600 DS GS V = - 4.5 V, I = - 25 mA 8 GS D a R V = - 10 V, I = - 500 mA 4 Drain-Source On-Resistance DS(on) GS D V = - 10 V, I = - 500 mA, T = 125 C 6 GS D J a g V = - 10 V, I = - 100 mA 100 mS Forward Transconductance fs DS D a V I = - 200 mA, V = 0 V - 1.4 V SD S GS Diode Forward Voltage b Dynamic Total Gate Charge Q 1.7 g V = - 30 V, V = - 15 V, I - 500 mA Gate-Source Charge Q 0.26 nC DS GS D gs Gate-Drain Charge Q 0.46 gd C Input Capacitance 23 iss Output Capacitance C V = - 25 V, V = 0 V, f = 1 MHz 10 pF oss DS GS Reverse Transfer Capacitance C 5 rss b, c Switching t Turn-On Time V = - 25 V, R = 150 , I - 165 mA, 20 ON DD L D ns V = - 10 V, R = 10 Turn-Off Time t 35 GEN g OFF Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A 1.0 1200 V = 10 V GS T = - 55 C J 7 V 0.8 8 V 900 25 C 6 V 0.6 125 C 600 0.4 5 V 300 0.2 4 V 0.0 0 012345 0246 8 10 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71433 2 S10-2432-Rev. C, 25-Oct-10 I - Drain Current (A) D I - Drain Current (mA) D