X-On Electronics has gained recognition as a prominent supplier of SI1025X-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1025X-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1025X-T1-GE3 Vishay

SI1025X-T1-GE3 electronic component of Vishay
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Part No.SI1025X-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V 500mA 280mW 4.0ohm @ 10V
Datasheet: SI1025X-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5049 ea
Line Total: USD 0.5 
Availability - 30644
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1716
6000 : USD 0.1716
9000 : USD 0.1716
15000 : USD 0.1716
30000 : USD 0.1716

1606
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3912
10 : USD 0.3417
30 : USD 0.3188
100 : USD 0.292
500 : USD 0.2807
1000 : USD 0.273

30644
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5049
10 : USD 0.376
100 : USD 0.2461
500 : USD 0.2059
1000 : USD 0.1851
3000 : USD 0.1644
9000 : USD 0.1587
24000 : USD 0.1576

432
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 42
Multiples : 1
42 : USD 0.2922
100 : USD 0.2436
250 : USD 0.1938

8730
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1919
6000 : USD 0.1899
9000 : USD 0.1756
15000 : USD 0.1746

   
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We are delighted to provide the SI1025X-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1025X-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1025X Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()V (V) I (mA) DS (min) DS(on) GS(th) D Definition 4 at V = - 10 V - 60 - 1 to - 3.0 - 500 GS TrenchFET Power MOSFETs High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Switching Speed: 20 ns (typ.) Low Input Capacitance: 23 pF (typ.) Miniature Package Gate-Source ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC SC-89 BENEFITS S 1 6 D 1 1 Ease in Driving Switches Low Offset Voltage G 2 5 G Marking Code: D 1 2 Low-Voltage Operation High-Speed Circuits D 3 4 S 2 2 Easily Driven Without Buffer Small Board Area Top View APPLICATIONS Ordering Information: Si1025X-T1-GE3 (Lead (Pb)-free and Halogen-free) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors etc. Battery Operated Systems Power Supply Converter Circuits Solid State Relays ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 60 DS V V Gate-Source Voltage 20 GS T = 25 C - 200 - 190 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 145 - 135 A mA b I - 650 Pulsed Drain Current DM a I - 450 - 380 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 A a P mW Maximum Power Dissipation D T = 85 C 145 130 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71433 www.vishay.com S10-2432-Rev. C, 25-Oct-10 1Si1025X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 10 A Drain-Source Breakdown Voltage - 60 DS GS D V V V = V , I = - 0.25 mA Gate Threshold Voltage - 1 - 3.0 GS(th) DS GS D V = 0 V, V = 10 V 200 DS GS I Gate-Body Leakage GSS V = 0 V, V = 5 V 100 DS GS nA V = - 50 V, V = 0 V - 25 DS GS I Zero Gate Voltage Drain Current DSS V = - 50 V, V = 0 V, T = 85 C - 250 DS GS J V = - 10 V, V = - 4.5 V - 50 DS GS a I mA On-State Drain Current D(on) V = - 10 V, V = - 10 V - 600 DS GS V = - 4.5 V, I = - 25 mA 8 GS D a R V = - 10 V, I = - 500 mA 4 Drain-Source On-Resistance DS(on) GS D V = - 10 V, I = - 500 mA, T = 125 C 6 GS D J a g V = - 10 V, I = - 100 mA 100 mS Forward Transconductance fs DS D a V I = - 200 mA, V = 0 V - 1.4 V SD S GS Diode Forward Voltage b Dynamic Total Gate Charge Q 1.7 g V = - 30 V, V = - 15 V, I - 500 mA Gate-Source Charge Q 0.26 nC DS GS D gs Gate-Drain Charge Q 0.46 gd C Input Capacitance 23 iss Output Capacitance C V = - 25 V, V = 0 V, f = 1 MHz 10 pF oss DS GS Reverse Transfer Capacitance C 5 rss b, c Switching t Turn-On Time V = - 25 V, R = 150 , I - 165 mA, 20 ON DD L D ns V = - 10 V, R = 10 Turn-Off Time t 35 GEN g OFF Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A 1.0 1200 V = 10 V GS T = - 55 C J 7 V 0.8 8 V 900 25 C 6 V 0.6 125 C 600 0.4 5 V 300 0.2 4 V 0.0 0 012345 0246 8 10 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71433 2 S10-2432-Rev. C, 25-Oct-10 I - Drain Current (A) D I - Drain Current (mA) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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