March 1996 NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -4A, -30V. R = 0.065 V = -10V DS(ON) GS transistors are produced using Fairchild s proprietary, high cell R = 0.1 V = -4.5V. DS(ON) GS density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide High density cell design for extremely low R . DS(ON) superior switching performance. These devices are particularly High power and current handling capability in a widely used suited for low voltage applications such as notebook computer surface mount package. power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to Dual MOSFET in surface mount package. transients are needed. 5 4 3 6 7 2 8 1 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter NDS8947 Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage -20 V GSS I Drain Current - Continuous (Note 1a) -4 A D - Pulsed -15 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W R JA Thermal Resistance, Junction-to-Case (Note 1) 40 C/W R JC 1997 Fairchild Semiconductor Corporation NDS8947.SAMElectrical Characteristics (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage V = 0 V, I = -250 A -30 V DSS GS D I Zero Gate Voltage Drain Current V = -24 V, V = 0 V -1 A DSS DS GS -10 A T = 55C J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = -250 A -1 -1.6 -2.8 V GS(th) DS GS D T = 125C -0.7 -1.2 -2.2 J R Static Drain-Source On-Resistance V = -10 V, I = -4.0 A 0.052 0.065 DS(ON) GS D T = 125C 0.075 0.13 J V = -4.5 V, I = -3.3 A 0.085 0.1 GS D I On-State Drain Current V = -10 V, V = -5 V -15 A D(on) GS DS V = -4.5 V, V = -5 V -5 GS DS g Forward Transconductance V = -10 V, I = -4.0 A 7 S FS DS D DYNAMIC CHARACTERISTICS Input Capacitance 690 pF C V = -15 V, V = 0 V, iss DS GS f = 1.0 MHz C Output Capacitance 430 pF oss C Reverse Transfer Capacitance 160 pF rss SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time 9 20 ns t V = -10 V, I = -1 A, D(on) DD D V = -10 V, R = 6 t Turn - On Rise Time GEN GEN 20 30 ns r t Turn - Off Delay Time 40 50 ns D(off) t Turn - Off Fall Time 19 40 ns f Q Total Gate Charge V = -10 V, 21 30 nC g DS I = -4.0 A, V = -10 V D GS Q Gate-Source Charge 3.1 nC gs Q Gate-Drain Charge 5.1 nC gd NDS8947.SAM