NDS9435A January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 5.3 A, 30 V R = 50 m V = 10 V DS(ON) GS Fairchild Semiconductors advanced PowerTrench R = 80 m V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave drive Low gate charge voltage ratings (4.5V 25V). Fast switching speed Applications Power management High performance trench technology for extremely low R DS(ON) Load switch Battery protection High power and current handling capability D D 5 4 D D DD 6 3 DD 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS 25 I Drain Current Continuous (Note 1a) 5.3 A D Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range 55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C/W JA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R C/W JA Thermal Resistance, Junction-to-Case (Note 1) 25 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS9435A NDS9435A 13 12mm 2500 units NDS9435A Rev E(W) 2002 Fairchild Semiconductor Corporation NDS9435A Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions MinTyp Max Units Off Characteristics BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 30 V DSS GS D BVDSS Breakdown Voltage Temperature I = 250 A, Referenced to 25C 23 mV/C D Coefficient T J I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 1 DSS DS GS A I GateBody Leakage, Forward V = 25 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage, Reverse V = 25 V V = 0 V 100 nA GSSR GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.7 3 V GS(th) DS GS D VGS(th) Gate Threshold Voltage I = 250 A, Referenced to 25C D 4.5 mV/C Temperature Coefficient T J R Static DrainSource V = 10 V, I = 5.3 A 42 50 m DS(on) GS D OnResistance V = 4.5 V, I = 4 A 65 80 GS D 57 77 V = 10 V, I = 5.3 A, T =125C GS D J I OnState Drain Current V = 10 V, V = 5 V 25 A D(on) GS DS g Forward Transconductance V = 5 V, I = 5.3 A 10 S FS DS D Dynamic Characteristics C Input Capacitance 528 pF iss V = 15 V, V = 0 V, DS GS C Output Capacitance 132 pF oss f = 1.0 MHz C Reverse Transfer Capacitance 70 pF rss Switching Characteristics (Note 2) t TurnOn Delay Time 7 14 ns d(on) V = 15 V, I = 1 A, DD D V = 10 V, R = 6 GS GEN t TurnOn Rise Time 13 24 ns r t TurnOff Delay Time 14 25 ns d(off) t TurnOff Fall Time 9 17 ns f Q Total Gate Charge 10 14 nC g V = 15 V, I = 4 A, DS D V = 10 V GS Q GateSource Charge 2.2 nC gs Q GateDrain Charge 2 nC gd DrainSource Diode Characteristics and Maximum Ratings I Maximum Continuous DrainSource Diode Forward Current 2.1 A S DrainSource Diode Forward V V = 0 V, I = 2.1 A (Note 2) 0.8 1.2 V SD GS S Voltage Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. R is guaranteed by design while R is determined by the user s board design. JC CA a) 50C/W when b) 105C/W when c) 125C/W when mounted on a 2 2 mounted on a 1in mounted on a .04 in minimum pad. pad of 2 oz copper pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% NDS9435A Rev E(W)