February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. R = 0.08 V = 10V DS(ON) GS transistors are produced using Fairchild s proprietary, high High density cell design for extremely low R . cell density, DMOS technology. This very high density DS(ON) process is especially tailored to minimize on-state resistance, High power and current handling capability in a widely used provide superior switching performance, and withstand high surface mount package. energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage Dual MOSFET in surface mount package. applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed. 4 5 3 6 7 2 1 8 Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter NDS9956A Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current - Continuous (Note 1a) 3.7 A D - Pulsed 15 Power Dissipation for Dual Operation 2 W P D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W R JA Thermal Resistance, Junction-to-Case (Note 1) 40 C/W R JC 1997 Fairchild Semiconductor Corporation NDS9956A.SAMElectrical Characteristics (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage V = 0 V, I = 250 A 30 V DSS GS D I Zero Gate Voltage Drain Current V = 24 V, V = 0 V 2 A DSS DS GS T = 55C 25 A J I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage V = V , I = 250 A 1 1.7 2.8 V GS(th) DS GS D T = 125C 0.7 1.2 2.2 J R Static Drain-Source On-Resistance V = 10 V, I = 2.2 A 0.06 0.08 DS(ON) GS D T = 125C 0.08 0.13 J V = 4.5 V, I = 1.0 A 0.08 0.11 GS D 0.11 0.18 T = 125C J I On-State Drain Current V = 10 V, V = 10 V 15 A D(on) GS DS V = 4.5 V, V = 10 V 3.5 GS DS g Forward Transconductance V = 15 V, I = 3.7 A 6 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 10 V, V = 0 V, 320 pF iss DS GS f = 1.0 MHz C Output Capacitance 225 pF oss C Reverse Transfer Capacitance 85 pF rss SWITCHING CHARACTERISTICS (Note 2) t Turn - On Delay Time V = 10 V, I = 1 A, 10 20 ns D(on) DD D V = 10 V, R = 6 t Turn - On Rise Time GEN GEN 13 20 ns r t Turn - Off Delay Time 21 50 ns D(off) t Turn - Off Fall Time 5 50 ns f Q Total Gate Charge V = 10 V, 9.5 27 nC g DS I = 3.7 A, V = 10 V D GS Gate-Source Charge 1.5 nC Q gs Q Gate-Drain Charge 3.3 nC gd NDS9956A.SAM