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X-On Electronics has gained recognition as a prominent supplier of NDT3055 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NDT3055 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NDT3055 ON Semiconductor

NDT3055 electronic component of ON Semiconductor
NDT3055 ON Semiconductor
NDT3055 MOSFETs
NDT3055  Semiconductors

Images are for reference only
See Product Specifications
Part No. NDT3055
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SOT-223 N-CH ENHANCE
Datasheet: NDT3055 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.377 ea
Line Total: USD 1508 
Availability - 15520
Ship by Thu. 16 Jan to Wed. 22 Jan
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
7760
Ship by Thu. 16 Jan to Wed. 22 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 0.4456
4000 : USD 0.428
8000 : USD 0.4216
12000 : USD 0.4152
16000 : USD 0.409
28000 : USD 0.4029

15520
Ship by Thu. 16 Jan to Wed. 22 Jan
MOQ : 4000
Multiples : 4000
4000 : USD 0.377
8000 : USD 0.3705
12000 : USD 0.364

3835
Ship by Thu. 23 Jan to Tue. 28 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7727
10 : USD 0.6256
30 : USD 0.5519
100 : USD 0.4968
500 : USD 0.4525
1000 : USD 0.4305

25626
Ship by Tue. 14 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0692
10 : USD 0.7282
100 : USD 0.5269
500 : USD 0.4356
1000 : USD 0.4026
2000 : USD 0.4026
4000 : USD 0.3861
24000 : USD 0.3762

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
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We are delighted to provide the NDT3055 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NDT3055 and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 1998 N N 4 A ) GS transistors are produced using Fairchild s proprietary, . high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching . These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line T M T M SuperSOT -3 SuperSOT -6 SuperSOT -8 SOT-223 SOIC-16 D D D D S S D S G G G D S G o T A N V V V V I 4 A D P ) 3 W D ) T J R R NDT3055 Rev.B 1998 Fairchild Semiconductor Corporation * Order option J23Z for cropped center drain lead. JC C/W 12 (Note 1) Thermal Resistance, Junction-to-Case JA C/W 42 (Note 1a) Thermal Resistance, Junction-to-Ambient THERMAL CHARACTERISTICS STG ,T C -65 to 150 Operating and Storage Temperature Range 1.1 (Note 1c 1.3 b) (Note 1 (Note 1a Power Dissipation Maximum 25 - Pulsed (Note 1a) Maximum Drain Current - Continuous GSS 20 - Continuous Gate-Source Voltage DSS 60 Drain-Source Voltage Units DT3055 Parameter Symbol C unless otherwise noted = 25 Absolute Maximum Ratings (J23Z) SOT-223* SOT-223 SO-8 TM power loss, and resistance to transients are needed. performance surface mount package. High power and current handling capability in a widely used DS(ON) for extremely low R High density cell design DS(ON N-Channel enhancement mode power field effect These V. = 10 V = 0.100 0 V. R , 6 Features General Description Enhancement Mode Field Effect Transistor -Channel DT3055 May

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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