NPT1015B GaN Wideband Transistor 28 V, 45 W Rev. V2 DC - 3.5 GHz Features Functional Schematic GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 3.5 GHz 28 V Operation 12 dB Gain 2.5 GHz 54 % Drain Efficiency 2.5 GHz 100 % RF Tested Standard metal ceramic package with bolt down flange RF / V 1 2 RF / V IN G OUT D RoHS* Compliant 3 Flange Description The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT1015 is ideally suited for defense Pin Configuration communications, land mobile radio, avionics, Pin No. Pin Name Function wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. 1 RF / V RF Input / Gate IN G Built using the SIGANTIC process - a proprietary 2 RF / V RF Output / Drain OUT D GaN-on-Silicon technology. 1 3 Flange Ground / Source 1. The Flange must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. Ordering Information Part Number Package NPT1015B bulk quantity NPT1015B-SMBPPR sample * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: NPT1015B GaN Wideband Transistor 28 V, 45 W Rev. V2 DC - 3.5 GHz RF Electrical Specifications: T = 25C, V = 28 V, I = 400 mA C DS DQ Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2.5 GHz G - 13.5 - dB SS Saturated Output Power CW, 2.5 GHz P - 47.3 - dBm SAT Drain Efficiency at Saturation CW, 2.5 GHz - 57 - % SAT Power Gain 2.5 GHz, P = 45 W G 10.5 12 - dB OUT P Drain Efficiency 2.5 GHz, P = 45 W 47 54 - % OUT Ruggedness: Output Mismatch All phase angles VSWR = 15:1, No Device Damage DC Electrical Characteristics: T = 25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 100 V I - - 16 mA GS DS DLK Gate-Source Leakage Current V = -8 V, V = 0 V I - - 8 mA GS DS GLK Gate Threshold Voltage V = 28 V, I = 16 mA V -2.3 -1.5 -0.7 V DS D T Gate Quiescent Voltage V = 28 V, I = 400 mA V -2.1 -1.2 -0.5 V DS D GSQ On Resistance V = 2 V, I = 120 mA R - 0.22 - DS D ON Maximum Drain Current V = 7 V pulsed, pulse width 300 s I - 9.2 - A DS D,MAX 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: