NDTL03N150C Power MOSFET 1500V, 10.5 , 2.5A, N-Channel Features wwwwww.on.onssemiemi..comcom Low On-Resistance Ultra High Voltage High Speed Switching V R (on) Max I 100% Avalanche Tested DSS DS D Max Pb-Free and RoHS compliance 10.5 10V 1500V 2.5A Typical Applications ELECTRICAL CONNECTION Switch mode power supply N-Channel AC Drive 2 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1, 2, 3, 4) Parameter SymbolValue Unit 1:Gate 2:Drain Drain to Source Voltage V 1500V 1 DSS 3 : Source Gate to Source Voltage V 30 V GSS Drain Current (DC) I 2.5A D Drain Current (Pulse) 3 I 5 A DP PW10s, duty cycle1% 2.5 Power Dissipation P W D 140 MARKING Tc=25C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Avalanche Energy (Single Pulse) (Note 2) E 34mJ AS 03N150 Avalanche Current (Note 3) I 2.5A AV LOT No. C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Note 2 : V =50V, L=10mH, I =2.5A (Fig.1) DD AV 1 TO-3P-3L Note 3 : L10mH, Single Pulse 2 3 THERMAL RESISTANCE RATINGS ORDERING INFORMATION Parameter SymbolValue Unit See detailed ordering and shipping information on page 5 of this data sheet. Junction to Case Steady State R 0.89 JC C/W Junction to Ambient (Note 4) R 50.0 JA Note 4 : Insertion mounted Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : March 2016 - Rev. 2 NDTL03N150C/D NDTL03N150C ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 5, 6, 7) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 1500 V BR DSS D GS Zero-Gate Voltage Drain Current I V =1200V, V=0V 1mA DSS DS GS Gate to Source Leakage Current I V =30V, V=0V 100 nA GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 2 4V GS DS D Forward Transconductance g V =20V, I=1.25A 1.9 S FS DS D Static Drain to Source On-State R (on) I =1.25A, V=10V 8 10.5 DS D GS Resistance Input Capacitance 650 pF Ciss Output Capacitance Coss V =30V, f=1MHz 70 pF DS Reverse Transfer Capacitance Crss 20 pF t (on) Turn-ON Delay Time 15 ns d t Rise Time 24 ns r See Fig.2 Turn-OFF Delay Time 140 ns t (off) d Fall Time t 47 ns f Total Gate Charge Qg 34 nC Gate to Source Charge Qgs V =200V, V =10V, I =2.5A 4.7 nC DS GS D Gate to Drain Miller Charge Qgd 15 nC Forward Diode Voltage V I =2.5A, V=0V 0.8 1.5V SD S GS Reverse Recovery Time trr 350 ns See Fig.3 Reverse Recovery Charge I =2.5A, V =0V, di/dt=100A/s Qrr S GS 2220 nC Effective Output Capacitance, Co(er) 18.3 pF Energy Related (Note 6) V =0V, V =0 to 1200V GS DS Effective Output Capacitance, Co(tr) 29.6 pF Time Related (Note 7) Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while V is rising from 0 to 80% V( ) . DS BR DSS Note 7 : Co(tr) is a fixed capacitance that gives the same charging time as Coss while V is rising from 0 to 80% V( ) . DS BR DSS Fig. 1 Unclamped Inductive Switching Test Circuit Fig. 2 Switching Time Test Circuit Fig. 3 Reverse Recovery Time Test Circuit www.onsemi.com 2