Ordering number : ENA2066A FW389 Power MOSFET FW389 Continued from preceding page Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Total Gate Charge Qg 10 nC Gate-to-Source Charge Qgs V =50V, V =10V, I =2A 1.4 nC DS GS D Gate-to-Drain Miller Charge Qgd 2.1 nC Diode Forward Voltage V I =2A, V =0V 0.78 1.2 V SD S GS Gata Resistance V =0V, V =0V, f=1MHz 0 12 Rg DS GS P-channel Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --100 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--100V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--2A 4.7 S DS D R (on)1 I =--2A, V =--10V 230 300 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--1A, V =--4.5V 240 336 m DS D GS R (on)3 I =--1A, V =--4V 250 355 m DS D GS Input Capacitance Ciss 1000 pF Output Capacitance Coss V =--20V, f=1MHz 77 pF DS Reverse Transfer Capacitance Crss 47 pF Turn-ON Delay Time t (on) 12 ns d Rise Time t 16 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 110 ns d Fall Time t 40 ns f Total Gate Charge Qg 21 nC Gate-to-Source Charge Qgs V =--50V, V =--10V, I =--2A 2.8 nC DS GS D Gate-to-Drain Miller Charge Qgd 4.4 nC Diode Forward Voltage V I =--2A, V =0V --0.79 --1.2 V SD S GS Gata Resistance V =0V, V =0V, f=1MHz 0 50 Rg DS GS Fig.1 Unclamped Inductive Switching Test Circuit N-channel P-channel D D L L 50 50 RG RG G G FW389 FW389 10V 0V S V 50 V 50 DD S DD 0V --10V No. A2066-2/8