NID6002NT4G ON Semiconductor

NID6002N Preferred Device SelfProtected FET with Temperature and Current Limit 65 V, 6.5 A, Single NChannel, DPAK NID6002N MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 70 Vdc DSS GatetoSource Voltage V 14 Vdc GS Drain Current Continuous I Internally Limited D Total Power Dissipation P W D T = 25C (Note 1) 1.3 A T = 25C (Note 2) 2.5 A Thermal Resistance C/W JunctiontoCase R 3.0 JC JunctiontoAmbient (Note 1) R 95 JA JunctiontoAmbient (Note 2) R 50 JA Single Pulse DraintoSource Avalanche Energy E 143 mJ AS (V = 50 Vdc, V = 5.0 Vdc, DD GS I = 1.3 Apk, L = 160 mH, R = 25 ) (Note 3) L G Operating and Storage Temperature Range T , T 55 to 150 C J stg (Note 4) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted onto minimum pad size (100 sq/mm) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (700 sq/mm) FR4 PCB, 1 oz cu. 3. Not subject to production test. 4. Normal prefault operating range. See thermal limit range conditions.