NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, NChannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package NID9N05CL, NID9N05ACL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V (BR)DSS (V = 0 V, I = 1.0 mA, T = 25C) 52 55 59 V GS D J (V = 0 V, I = 1.0 mA, T = 40C to 125C) 50.8 54 59.5 V GS D J Temperature Coefficient (Negative) 10 mV/C Zero Gate Voltage Drain Current I A DSS (V = 40 V, V = 0 V) 10 DS GS (V = 40 V, V = 0 V, T = 125C) 25 DS GS J GateBody Leakage Current I A GSS (V = 8 V, V = 0 V) 10 GS DS (V = 14 V, V = 0 V) 22 GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V GS(th) (V = V , I = 100 A) 1.3 1.75 2.5 V DS GS D 4.5 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 4.0 V, I = 1.5 A) 153 181 GS D (V = 3.5 V, I = 0.6 A) 175 364 GS D (V = 3.0 V, I = 0.2 A) 1210 GS D (V = 12 V, I = 9.0 A) 70 90 GS D (V = 12 V, I = 12 A) 67 95 GS D Forward Transconductance (Note 3) (V = 15 V, I = 9.0 A) g 24 Mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 155 250 pF iss Output Capacitance C 60 100 (V = 40 V, V = 0 V, f = 10 kHz) oss DS GS Transfer Capacitance C 25 40 rss Input Capacitance C 175 pF iss Output Capacitance C 70 (V = 25 V, V = 0 V, f = 10 kHz) DS GS oss Transfer Capacitance C 30 rss 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.