AYW xxxxx NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, NChannel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT223 Package NIF9N05CL, NIF9N05ACL MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V (BR)DSS (V = 0 V, I = 1.0 mA, T = 25C) 52 55 59 V GS D J (V = 0 V, I = 1.0 mA, T = 40C to 125C) 50.8 54 59.5 V GS D J Temperature Coefficient (Negative) 9.3 mV/C Zero Gate Voltage Drain Current I A DSS (V = 40 V, V = 0 V) 10 DS GS (V = 40 V, V = 0 V, T = 125C) 25 DS GS J GateBody Leakage Current I A GSS (V = 8 V, V = 0 V) 10 GS DS (V = 14 V, V = 0 V) 22 GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V GS(th) (V = V , I = 100 A) 1.3 1.75 2.5 V DS GS D 4.1 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 3.5 V, I = 0.6 A) 190 380 GS D (V = 4.0 V, I = 1.5 A) 165 200 GS D (V = 10 V, I = 2.6 A) 107 125 GS D Forward Transconductance (Note 3) (V = 15 V, I = 2.6 A) g 3.8 Mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 155 250 pF iss V = 35 V, V = 0 V, DS GS Output Capacitance C 60 100 oss f = 10 kHz Transfer Capacitance C 25 40 rss Input Capacitance C 170 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 70 oss f = 10 kHz Transfer Capacitance C 30 rss 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.