AYW 5003N NIF5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 14 A, Single NChannel, SOT223 NIF5003N MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Clamped Breakdown Voltage V (BR)DSS (V = 0 Vdc, I = 250 Adc) 42 46 51 Vdc GS D (V = 0 Vdc, I = 250 Adc, T = 40C to 150C) 40 45 51 mV/C GS D J Zero Gate Voltage Drain Current I Adc DSS (V = 32 Vdc, V = 0 Vdc) 0.6 5.0 DS GS (V = 32 Vdc, V = 0 Vdc, T = 150C) 2.5 DS GS J Gate Input Current I 50 125 Adc GSS (V = 5.0 Vdc, V = 0 Vdc) GS DS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) (V = V , I = 1.2 mAdc) 1.0 1.7 2.2 Vdc DS GS D Threshold Temperature Coefficient (Negative) 5.0 mV/C Static DraintoSource OnResistance (Note 4) R m DS(on) (V = 10 Vdc, I = 3.0 Adc, T 25C) 53 68 GS D J (V = 10 Vdc, I = 3.0 Adc, T 150C) 95 123 GS D J Static DraintoSource OnResistance (Note 4) R m DS(on) (V = 5.0 Vdc, I = 3.0 Adc, T 25C) 63 76 GS D J (V = 5.0 Vdc, I = 3.0 Adc, T 150C) 105 135 GS D J SourceDrain Forward On Voltage V 0.95 1.1 V SD (I = 7.0 A, V = 0 V) S GS SWITCHING CHARACTERISTICS Turnon Time R = 4.7 , V = 0 to 10 V, V = 12 V T 16 20 s L in DD (on) (V to 90% I ) in D Turn off Time R = 4.7 , V = 10 to 0 V, V = 12 V T 80 100 s L in DD (off) (V to 10% I ) in D Slew Rate On R = 4.7 , dV /dt 1.4 V s L DS on V = 0 to 10 V, V = 12 V in DD Slew Rate Off R = 4.7 , dV /dt 0.5 V s L DS off V = 10 to 0 V, V = 12 V in DD SELF PROTECTION CHARACTERISTICS (T = 25C unless otherwise noted) (Note 5) J Current Limit (V = 5.0 Vdc) I 12 18 24 Adc GS LIM V = 10 V (V = 5.0 Vdc, T = 150C) 7.0 13 18 DS GS J Current Limit (V = 10 Vdc) I 18 22 30 Adc GS LIM V = 10 V (V = 10 Vdc, T = 150C) 13 18 25 DS GS J Temperature Limit (Turn off) V = 5.0 Vdc T 150 175 200 C GS LIM(off) Thermal Hysteresis V = 5.0 Vdc T 15 C GS LIM(on) Temperature Limit (Turn off) V = 10 Vdc T 150 165 185 C GS LIM(off) Thermal Hysteresis V = 10 Vdc T 15 C GS LIM(on) ESD ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J ElectroStatic Discharge Capability Human Body Model (HBM) ESD 4000 V ElectroStatic Discharge Capability Machine Model (MM) ESD 400 V 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part.