SFT1443-TL-H ON Semiconductor

Ordering number : ENA1896B SFT1443 Power MOSFET SFT1443 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.5 2.6V GS DS D Forward Transconductance g V =10V, I=4.5A 4 S FS DS D R(on)1 I =3A, V=10V 180 225m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1.5A, V=4.5V 195 275m DS D GS R(on)3 I =1.5A, V=4V 205 290m DS D GS Input Capacitance Ciss 490 pF Output Capacitance Coss V =20V, f=1MHz 34 pF DS Reverse Transfer Capacitance Crss 19 pF Turn-ON Delay Time t (on) 8 ns d Rise Time t 10 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 34 ns d Fall Time t 24 ns f Total Gate Charge Qg 9.8 nC Gate to Source Charge Qgs V =50V, V =10V, I =9A 1.8 nC DS GS D Gate to Drain Miller Charge Qgd 1.6 nC Forward Diode Voltage V I =9A, V=0V 1.03 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =50V DD IN 10V 0V I =4.5A D V IN R =11.1 L D V OUT PW=10s D.C.1% G SFT1443 P.G 50 S No.A1896-2/6