NID5001N SelfProtected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutors latest MOSFET technology process to NID5001N MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Clamped Breakdown Voltage V (BR)DSS (V = 0 Vdc, I = 250 Adc) 42 46 50 Vdc GS D (V = 0 Vdc, I = 250 Adc, T = 150C) 42 44 50 GS D J Zero Gate Voltage Drain Current I Adc DSS (V = 32 Vdc, V = 0 Vdc) 1.5 5.0 DS GS (V = 32 Vdc, V = 0 Vdc, T = 150C) 6.5 DS GS J Gate Input Current I 50 100 Adc GSSF (V = 5.0 Vdc, V = 0 Vdc) GS DS ON CHARACTERISTICS Gate Threshold Voltage V GS(th) (V = V , I = 1.2 mAdc) 1.0 1.8 2.0 Vdc DS GS D Threshold Temperature Coefficient 5.0 mV/C Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 10 Vdc, I = 5.0 Adc, T 25C) 23 29 GS D J (V = 10 Vdc, I = 5.0 Adc, T 150C) 43 55 GS D J Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 5.0 Vdc, I = 5.0 Adc, T 25C) 28 34 GS D J (V = 5.0 Vdc, I = 5.0 Adc, T 150C) 50 60 GS D J SourceDrain Forward On Voltage V 0.80 1.1 V SD (I = 5 A, V = 0 V) S GS SWITCHING CHARACTERISTICS Turnon Time T 32 40 s (on) V = 5.0 V , V = 25 V GS dc DD dc I = 1.0 A , Ext R = 2.5 D dc G Turnoff Time T 68 75 (off) Turnon Time T 11 15 (on) V = 10 V , V = 25 V GS dc DD dc, I = 1.0 A , Ext R = 2.5 D dc G Turnoff Time T 86 95 (off) Slew Rate On R = 4.7 , dV /dt 0.5 V s L DS on V = 0 to 10 V, V = 12 V in DD SlewRate Off R = 4.7 , dV /dt 0.35 V s DS off L V = 10 to 0 V, V = 12 V in DD SELF PROTECTION CHARACTERISTICS (T = 25C unless otherwise noted) J Current Limit (V = 5.0 Vdc) I 21 30 36 Adc LIM GS V = 10 V (V = 5.0 Vdc, T = 150C) 12 19 30 DS GS J (V = 10 Vdc) 29 41 49 GS V = 10 V (V = 10 Vdc, T = 150C) 13 24 31 DS GS J Temperature Limit (Turnoff) V = 5.0 Vdc T 150 175 200 C GS LIM(off) Temperature Limit T 135 160 185 C LIM(on) V = 5.0 Vdc GS (Circuit Reset) Temperature Limit (Turnoff) V = 10 Vdc T 150 165 185 C GS LIM(off) Temperature Limit T 135 150 170 C LIM(on) V = 10 Vdc GS (Circuit Reset) ESD ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J ElectroStatic Discharge Capability ESD V Human Body Model (HBM) 4000 Machine Model (MM) 400 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.