MTW32N20EG ON Semiconductor

MTW32N20E Power MOSFET 32 Amps, 200 Volts N Channel TO247 This advanced Power MOSFET is designed to withstand high MTW32N20E ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V (BR)DSS 200 Vdc (V = 0 V, I = 250 Adc) GS D Temperature Coefficient (Positive) 247 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 200 Vdc, V = 0) 250 DS GS (V = 200 Vdc, V = 0, T = 125C) 1000 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage V GS(th) (V = V , I = 250 Adc) 2.0 4.0 Vdc DS GS D Temperature Coefficient (Negative) 8.0 mV/C Static DrainSource OnResistance (V = 10 Vdc, I = 16 Adc) R 0.064 0.075 GS D DS(on) DrainSource OnVoltage (V = 10 Vdc) V Vdc GS DS(on) (I = 32 Adc) 3.0 D (I = 16 Adc, T = 125C) 2.7 D J Forward Transconductance (V = 15 Vdc, I = 16 Adc) g 12 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 3600 5000 pF iss Output Capacitance C 690 1000 (V = 25 Vdc, V = 0, f = 1.0 MHz) oss DS GS Reverse Transfer Capacitance C 130 250 rss SWITCHING CHARACTERISTICS (Notes 1 & 2) TurnOn Delay Time t 25 50 ns d(on) Rise Time t 120 240 r (V = 100 Vdc, I = 32 Adc, DD D V = 10 Vdc, R = 6.2 ) GS G Turn Off Delay Time t 75 150 d(off) Fall Time t 91 182 f Gate Charge Q 85 120 nC T Q 12 1 (V = 160 Vdc, I = 32 Adc, DS D V = 10 Vdc) GS Q 40 2 Q 30 3 SOURCEDRAIN DIODE CHARACTERISTICS (Note 1) Forward OnVoltage V Vdc SD (I = 32 Adc, V = 0) S GS 1.1 2.0 (I = 16 Adc, V = 0, T = 125C) S GS J 0.9 Reverse Recovery Time t 280 ns rr t 195 a (I = 32 Adc, V = 0, dI /dt = 100 A/ s) S GS S t 85 b Reverse Recovery Stored Charge Q 2.94 C RR INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance L 5.0 nH D (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance L 13 nH S (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature.