X-On Electronics has gained recognition as a prominent supplier of FW344A-TL-2W MOSFETs across the USA, India, Europe, Australia, and various other global locations. FW344A-TL-2W MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FW344A-TL-2W ON Semiconductor

FW344A-TL-2W electronic component of ON Semiconductor
FW344A-TL-2W ON Semiconductor
FW344A-TL-2W MOSFETs
FW344A-TL-2W  Semiconductors

Images are for reference only
See Product Specifications
Part No. FW344A-TL-2W
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PCH+NCH 4V DRIVE SER
Datasheet: FW344A-TL-2W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1755
Multiples : 1
1755 : USD 0.1482
1770 : USD 0.1469
1802 : USD 0.1443
1835 : USD 0.1417
1852 : USD 0.1404
1887 : USD 0.1378
1924 : USD 0.1352
N/A

Obsolete
0

Multiples : 1457
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5724
10 : USD 0.4712
100 : USD 0.3042
1000 : USD 0.2432
2500 : USD 0.2326
10000 : USD 0.2326
25000 : USD 0.2242
50000 : USD 0.2211
100000 : USD 0.2158
N/A

Obsolete
0
MOQ : 59
Multiples : 1
59 : USD 0.1463
100 : USD 0.1439
250 : USD 0.1415
500 : USD 0.1392
N/A

Obsolete
0
MOQ : 59
Multiples : 1
59 : USD 0.1509
100 : USD 0.1485
250 : USD 0.146
500 : USD 0.1436
N/A

Obsolete
0
MOQ : 1723
Multiples : 54
1723 : USD 0.1559
1751 : USD 0.1533
1781 : USD 0.1508
1810 : USD 0.1484
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the FW344A-TL-2W from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FW344A-TL-2W and other electronic components in the MOSFETs category and beyond.

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Ordering number : EN8998C FW344A Power MOSFET FW344A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =4.5A 2.6 S DS D R (on)1 I =4.5A, V =10V 49 64 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =2A, V =4.5V 80 112 m DS D GS R (on)3 I =2A, V =4V 100 140 m DS D GS Input Capacitance Ciss 280 pF Output Capacitance Coss V =10V, f=1MHz 60 pF DS Reverse Transfer Capacitance Crss 30 pF Turn-ON Delay Time t (on) 6ns d Rise Time t 21 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 20 ns d Fall Time t 10 ns f Total Gate Charge Qg 5.6 nC Gate-to-Source Charge Qgs V =10V, V =10V, I =4.5A 1.2 nC DS GS D Gate-to-Drain Miller Charge Qgd 0.8 nC Diode Forward Voltage V I =4.5A, V =0V 0.85 1.2 V SD S GS P-channel Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--3.5A 3.9 S DS D R (on)1 I =--3.5A, V =--10V 78 102 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--2A, V =--4.5V 125 175 m DS D GS R (on)3 I =--2A, V =--4V 145 205 m DS D GS Input Capacitance Ciss 250 pF Output Capacitance Coss V =--10V, f=1MHz 65 pF DS Reverse Transfer Capacitance Crss 46 pF Turn-ON Delay Time t (on) 5.4 ns d Rise Time t 34 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 28 ns d Fall Time t 24 ns f Total Gate Charge Qg 5nC Gate-to-Source Charge Qgs V =--10V, V =--10V, I =--3.5A 1nC DS GS D Gate-to-Drain Miller Charge Qgd 1.2 nC Diode Forward Voltage V I =--3.5A, V =0V --0.88 --1.5 V SD S GS No.8998-2/9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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