Ordering number : EN8998C FW344A Power MOSFET FW344A Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =4.5A 2.6 S DS D R (on)1 I =4.5A, V =10V 49 64 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =2A, V =4.5V 80 112 m DS D GS R (on)3 I =2A, V =4V 100 140 m DS D GS Input Capacitance Ciss 280 pF Output Capacitance Coss V =10V, f=1MHz 60 pF DS Reverse Transfer Capacitance Crss 30 pF Turn-ON Delay Time t (on) 6ns d Rise Time t 21 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 20 ns d Fall Time t 10 ns f Total Gate Charge Qg 5.6 nC Gate-to-Source Charge Qgs V =10V, V =10V, I =4.5A 1.2 nC DS GS D Gate-to-Drain Miller Charge Qgd 0.8 nC Diode Forward Voltage V I =4.5A, V =0V 0.85 1.2 V SD S GS P-channel Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.3 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--3.5A 3.9 S DS D R (on)1 I =--3.5A, V =--10V 78 102 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--2A, V =--4.5V 125 175 m DS D GS R (on)3 I =--2A, V =--4V 145 205 m DS D GS Input Capacitance Ciss 250 pF Output Capacitance Coss V =--10V, f=1MHz 65 pF DS Reverse Transfer Capacitance Crss 46 pF Turn-ON Delay Time t (on) 5.4 ns d Rise Time t 34 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 28 ns d Fall Time t 24 ns f Total Gate Charge Qg 5nC Gate-to-Source Charge Qgs V =--10V, V =--10V, I =--3.5A 1nC DS GS D Gate-to-Drain Miller Charge Qgd 1.2 nC Diode Forward Voltage V I =--3.5A, V =0V --0.88 --1.5 V SD S GS No.8998-2/9