NDUL09N150C Power MOSFET www.onsemi.com 1500V, 3.0 , 9A, N-Channel Features Electrical Connection Low On-Resistance High Speed Switching N-Channel Ultra High Voltage 100% Avalanche Tested Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage V 1500V DSS Gate to Source Voltage V 30V GSS Drain Current (DC) I 9A D A Drain Current (DC) Limited by Package I 6 DL Drain Current (Pulse) I 18 A DP PW 10s, duty cycle 1% Marking 3.0 Power Dissipation P W D Tc=25 C 78 Junction Temperature Tj 150 C 55 to Storage Temperature Tstg C +150 Source Current (Body Diode) I 6A S 1 Avalanche Energy (Single Pulse) * E 197mJ AS Lead Temperature for Soldering T 260 C L Purposes, 3 mm from case for 10 seconds Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Case Steady State R 1.60 JC C/W 2 Junction to Ambient * R 41.7 JA 1 Note : * V =50V, L=10mH, I =6A (Fig.1) DD AV 2 * Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : February 2015 - Rev. 1 NDUL09N150C/D NDUL09N150C Electrical Characteristics at Ta 25 C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =10mA, V=0V 1500 V BR DSS D GS Zero-Gate Voltage Drain Current I V =1200V, V=0V 1mA DSS DS GS Gate to Source Leakage Current I V =30V, V=0V 100 nA GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 2 4V GS DS D Forward Transconductance g V =20V, I=3A 5.2 S FS DS D Static Drain to Source On-State Resistance R(on) I =3A, V=10V 2.2 3.0 DS D GS Input Capacitance Ciss 2025 pF Output Capacitance Coss V =30V, f=1MHz 222 pF DS Reverse Transfer Capacitance Crss 66 pF Turn-ON Delay Time t (on) 33 ns d Rise Time t 75 ns r See Fig.2 Turn-OFF Delay Time t (off) 500 ns d Fall Time t 111 ns f Total Gate Charge Qg 114 nC Gate to Source Charge Qgs V =200V, V =10V, I =6A 12 nC DS GS D Gate to Drain Miller Charge Qgd 57 nC Forward Diode Voltage V I =6A, V=0V 0.8 1.5V SD S GS Reverse Recovery Time t See Fig.3 1050 ns rr Reverse Recovery Charge Q I =6A, V =0V, di/dt=100A/ s 9010 nC rr S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 : Unclamped Inductive Switching Fig.2 : Switching Time Test Circuit Test Circuit Fig.3 : Reverse Recovery Time Test Circuit www.onsemi.com 2