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This literature is subject to all applicable copyright laws and is not for resale in any manner.HUF76639S3ST F085 July 2012 50A, 100V, 0.026 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-263AB Ultra Low On-Resistance DRAIN -r = 0.026, V = 10V GS DS(ON) (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical Models SOURCE - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Peak Current vs Pulse Width Curve HUF76639S3S UIS Rating Curve Switching Time vs R Curves GS Symbol D Ordering Information PART NUMBER PACKAGE BRAND G HUF76639S3ST F085 TO-263AB 76639S NOTE: When ordering, use the entire part number. Add the suffix T S to obtain the variant in tape and reel, e.g., HUF76639S3ST. o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C HUF76639S3ST F085 UNITS Drain to Source Voltage (Note 1) V 100 V DSS Drain to Gate Voltage (R = 20k ) (Note 1) . V 100 V GS DGR Gate to Source Voltage V 16 V GS Drain Current o Continuous (T = 25 C, V = 5V) . I 50 A C GS D o Continuous (T = 25 C, V = 10V) (Figure 2) I 51 A C GS D o Continuous (T = 100 C, V = 5V) I 35 A C GS D o Continuous (T = 100 C, V = 4.5V) (Figure 2) . I 34 A C GS D Pulsed Drain Current I Figure 4 DM Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation . P 180 W D o o Derate Above 25 C 1.2 W/ C o Operating and Storage Temperature T , T -55 to 175 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s . T 300 C L o Package Body for 10s, See Techbrief TB334 . T 260 C pkg NOTES: o o 1. T = 25 C to 150 C. J CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at