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HUFA76413DK8T-F085 N-Channel Logic Level UltraFET Power MOSFET HUFA76413DK8T -F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56m Features General Description 150C Maximum Junction Temperature These N-Channel power MOSFETs are manufactured using the UIS Capability (Single Pulse and Repetitive Pulse) innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon Ultra-Low On-Resistance r = 0.049, VGS = 10V DS(ON) area, resulting in outstanding performance. This device is capable of withstanding high energy Ultra-Low On-Resistance r = 0.056 , VGS = 5V DS(ON) in the avalanche mode and the diode exhibits very low reverse Qualified to AEC Q101 recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as RoHS Compliant switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in Applications portable and battery-operated products. Motor and Load Control Powertrain Management MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 16 V GS Drain Current -Continuous (T = 25 C, V = 10V) 5.1 C GS -Continuous (T = 25 C, V = 5V) 4.8 C GS I A D -Continuous (T = 125 C, V = 5V, R = 228C/W) 1 C GS JA -Pulsed Figure 4 E Single Pulse Avalanche Energy (Note 1) 260 mJ AS Power Dissipation 2.5 W P D Derate Above 25 C 0.02 W/C T , T Operating and Storage Temperature -55 to +150 C J STG Thermal Characteristics 50 Thermal Resistance Junction to Ambient SO-8 (Note 2) R 191 C/W Thermal Resistance Junction to Ambient SO-8 (Note 3) JA 228 Thermal Resistance Junction to Ambient SO-8 (Note 4) Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity HUFA76413DK8T -F085 SO-8 330mm 12mm 2500 units 76413DK8 Notes: 1: Starting T = 25 C, L = 20mH, I = 5.1A J AS 2 2: R is 50 C/W when mounted on a 0.5 in copper pad on FR-4 at 1 second. JA 2 3: R is 191 C/W when mounted on a 0.027 in copper pad on FR-4 at 1000 seconds. JA 2 4: R is 228 C/W when mounted on a 0.006 in copper pad on FR-4 at 1000 seconds. JA 5: A suffix as F085P has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. 2016 Semiconductor Components Industries, LLC. Publication Order Number: HUFA76413DK8T-F085/D September-2017, Rev. 3