Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network IMD10AMT1G www.onsemi.com High Current: I = 500 mA max C NSV Prefix for Automotive and Other Applications Requiring (3) (2) (1) Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS R1 Q 1 Compliant Q2 MAXIMUM RATINGS (T = 25C) R2 A R1 Rating Symbol Value Unit CollectorBase Voltage V 50 Vdc (BR)CBO (4) (5) (6) CollectorEmitter Voltage V 50 Vdc (BR)CEO SC74 EmitterBase Voltage V 5.0 Vdc (BR)EBO Collector Current Continuous I 500 mAdc C MARKING THERMAL CHARACTERISTICS DIAGRAM Characteristic Symbol Max Unit Power Dissipation* P 285 mW D SC74R 6 D10M 318AA Junction Temperature T 150 C J Style 21 1 Storage Temperature T 55 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the D10 = Specific Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code assumed, damage may occur and reliability may be affected. = PbFree Package *Total for both Transistors. ORDERING INFORMATION Device Package Shipping IMD10AMT1G SC74R 3000 / Tape & Reel (PbFree) NSVIMD10AMT1G SC74R 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 Publication Order Number: July, 2021 Rev. 3 IMD10AMT1G/DIMD10AMT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, common for Q and Q , minus sign for Q (PNP) omitted) A 1 2 1 Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorBase Breakdown Voltage V 50 Vdc (BR)CBO (I = 50 Adc, I = 0 A) C E CollectorEmitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 1.0 mAdc, I = 0 A) C B EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 50 Adc, I = 0 A) E C CollectorBase Cutoff Current I 100 nA CBO (V = 50 Vdc, I = 0 A) CB E EmitterBase Cutoff Current Q1 (PNP) I 1.0 mA EBO (V = 6.0 Vdc, I = 0 A) 0.5 EB C Q2 (NPN) CollectorEmitter Cutoff Current I 100 nA CES (V = 25 Vdc, I = 0 A) CE B ON CHARACTERISTICS (Note 1) DC Current Gain h FE (V = 5.0 V, I = 100 mA) Q1(PNP) 68 CE C (V = 5.0 V, I = 1.0 mA) Q2(NPN) 100 600 CE C CollectorEmitter Saturation Voltage V 0.3 Vdc CE(sat) (I = 10 mA, I = 1.0 mA) C B Output Voltage (on) V 0.2 Vdc OL (V = 5.0 V, V = 2.5 V, R = 1.0 k ) CC B L Output Voltage (off) V 4.9 Vdc OH (V = 5.0 V, V = 0.25 V, R = 1.0 k ) CC B L Input Resistor R1 Q1(PNP) 70 130 Q2(NPN) 7.0 13 k Resistor Ratio R1/R2 Q1(PNP) 0.008 0.012 Q2(NPN) 1. Pulse Test: Pulse Width 300 s, Duty Cycle < 2.0%. www.onsemi.com 2