X-On Electronics has gained recognition as a prominent supplier of HUF76013D3ST MOSFETs across the USA, India, Europe, Australia, and various other global locations. HUF76013D3ST MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HUF76013D3ST ON Semiconductor

HUF76013D3ST electronic component of ON Semiconductor
HUF76013D3ST ON Semiconductor
HUF76013D3ST MOSFETs
HUF76013D3ST  Semiconductors

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See Product Specifications
Part No. HUF76013D3ST
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 20V 20A 3-Pin(2+Tab) TO-252AA T/R
Datasheet: HUF76013D3ST Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1188: USD 0.343 ea
Line Total: USD 407.48 
Availability - 0
MOQ: 1188  Multiples: 1188
Pack Size: 1188
Availability Price Quantity
0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1188
Multiples : 1188
1188 : USD 0.343

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 2500
Multiples : 2500
2500 : USD 0.0939

   
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the HUF76013D3ST from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HUF76013D3ST and other electronic components in the MOSFETs category and beyond.

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FQP10N20C / FQPF10N20C N-Channel QFET MOSFET November 2013 FQP10N20C / FQPF10N20C N-Channel QFET MOSFET 200 V, 9.5 A, 360 m Features Description 9.5 A, 200 V, R = 360 m (Max.) V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS I = 4.75 A D produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 20 nC) planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce Low Crss (Typ. 40.5 pF) on-state resistance, and to provide superior switching 100% Avalanche Tested performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G G D S D TO-220 S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP10N20C FQPF10N20C Unit V Drain to Source Voltage 200 V DSS o -Continuous (T = 25 C) 9.5 9.5 * A C I Drain Current D o -Continuous (T = 100 C) 6.0 6.0 * A C I Drain Current - Pulsed (Note 1) 38 38 * A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 210 mJ AS I Avalanche Current (Note 1) 9.5 A AR E Repetitive Avalanche Energy (Note 1) 7.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns o (T = 25 C) 72 38 W C P Power Dissipation D o - Derate above 25 C 0.57 0.3 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP10N20C FQPF10N20C Unit R Thermal Resistance, Junction to Case, Max 1.74 3.33 C/W JC R Thermal Resistance, Junction to Ambient, Max 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP10N20C / FQPF10N20C Rev. C1 FQP10N20C / FQPF10N20C N-Channel QFET MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQP10N20C FQP10N20C TO-220 Tube N/A 50 units FQPF10N20C FQPF10N20C TO-220F Tube N/A 50 units o Electrical Characteristics T = 25 C unless otherwise noted. C Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 200 -- -- V DSS GS D BV Breakdown Voltage Temperature Coeffi- DSS I = 250 A, Referenced to 25C -- 0.28 -- V/C D / T cient J V = 200 V, V = 0 V -- -- 10 A DS GS I Zero Gate Voltage Drain Current DSS V = 160 V, T = 125C -- -- 100 A DS C I = 30 V, V = 0 V Gate-Body Leakage Current, Forward V -- -- 100 nA GSSF GS DS I V = -30 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V V = V , I = 250 A Gate Threshold Voltage 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 4.75 A -- 0.29 0.36 GS D On-Resistance g V = 40 V, I = 4.75 A Forward Transconductance -- 5.5 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 395 510 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 97 125 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 40.5 53 pF rss Switching Characteristics t Turn-On Delay Time -- 11 30 ns d(on) V = 100 V, I = 9.5 A, DD D t Turn-On Rise Time -- 92 190 ns r R = 25 G t Turn-Off Delay Time -- 70 150 ns d(off) (Note 4) t Turn-Off Fall Time -- 72 160 ns f Q Total Gate Charge -- 20 26 nC g V = 160 V, I = 9.5 A, DS D Q Gate-Source Charge -- 3.1 -- nC V = 10 V gs GS (Note 4) Q Gate-Drain Charge -- 10.5 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 9.5 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 38 A SM V V = 0 V, I = 9.5 A Drain-Source Diode Forward Voltage -- -- 1.5 V SD GS S t V = 0 V, I = 9.5 A, Reverse Recovery Time -- 158 -- ns rr GS S Q dI / dt = 100 A/s Reverse Recovery Charge -- 0.97 -- C rr F Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 3.5 mH, I = 9.5 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 9.5 A, di/dt 300 A/s, V BV starting T = 25C. SD DD DSS, J 4. Essentially independent of operating temperature. 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQP10N20C / FQPF10N20C Rev. C1

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