FQP10N20C / FQPF10N20C N-Channel QFET MOSFET November 2013 FQP10N20C / FQPF10N20C N-Channel QFET MOSFET 200 V, 9.5 A, 360 m Features Description 9.5 A, 200 V, R = 360 m (Max.) V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS I = 4.75 A D produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 20 nC) planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce Low Crss (Typ. 40.5 pF) on-state resistance, and to provide superior switching 100% Avalanche Tested performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G G D S D TO-220 S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP10N20C FQPF10N20C Unit V Drain to Source Voltage 200 V DSS o -Continuous (T = 25 C) 9.5 9.5 * A C I Drain Current D o -Continuous (T = 100 C) 6.0 6.0 * A C I Drain Current - Pulsed (Note 1) 38 38 * A DM V Gate to Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 210 mJ AS I Avalanche Current (Note 1) 9.5 A AR E Repetitive Avalanche Energy (Note 1) 7.2 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns o (T = 25 C) 72 38 W C P Power Dissipation D o - Derate above 25 C 0.57 0.3 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, T 300 C L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP10N20C FQPF10N20C Unit R Thermal Resistance, Junction to Case, Max 1.74 3.33 C/W JC R Thermal Resistance, Junction to Ambient, Max 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP10N20C / FQPF10N20C Rev. C1 FQP10N20C / FQPF10N20C N-Channel QFET MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQP10N20C FQP10N20C TO-220 Tube N/A 50 units FQPF10N20C FQPF10N20C TO-220F Tube N/A 50 units o Electrical Characteristics T = 25 C unless otherwise noted. C Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 200 -- -- V DSS GS D BV Breakdown Voltage Temperature Coeffi- DSS I = 250 A, Referenced to 25C -- 0.28 -- V/C D / T cient J V = 200 V, V = 0 V -- -- 10 A DS GS I Zero Gate Voltage Drain Current DSS V = 160 V, T = 125C -- -- 100 A DS C I = 30 V, V = 0 V Gate-Body Leakage Current, Forward V -- -- 100 nA GSSF GS DS I V = -30 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V V = V , I = 250 A Gate Threshold Voltage 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 4.75 A -- 0.29 0.36 GS D On-Resistance g V = 40 V, I = 4.75 A Forward Transconductance -- 5.5 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 395 510 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 97 125 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 40.5 53 pF rss Switching Characteristics t Turn-On Delay Time -- 11 30 ns d(on) V = 100 V, I = 9.5 A, DD D t Turn-On Rise Time -- 92 190 ns r R = 25 G t Turn-Off Delay Time -- 70 150 ns d(off) (Note 4) t Turn-Off Fall Time -- 72 160 ns f Q Total Gate Charge -- 20 26 nC g V = 160 V, I = 9.5 A, DS D Q Gate-Source Charge -- 3.1 -- nC V = 10 V gs GS (Note 4) Q Gate-Drain Charge -- 10.5 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 9.5 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 38 A SM V V = 0 V, I = 9.5 A Drain-Source Diode Forward Voltage -- -- 1.5 V SD GS S t V = 0 V, I = 9.5 A, Reverse Recovery Time -- 158 -- ns rr GS S Q dI / dt = 100 A/s Reverse Recovery Charge -- 0.97 -- C rr F Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 3.5 mH, I = 9.5 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 9.5 A, di/dt 300 A/s, V BV starting T = 25C. SD DD DSS, J 4. Essentially independent of operating temperature. 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQP10N20C / FQPF10N20C Rev. C1