X-On Electronics has gained recognition as a prominent supplier of HUF76419S3ST_F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HUF76419S3ST_F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HUF76419S3ST_F085 ON Semiconductor

HUF76419S3ST_F085 electronic component of ON Semiconductor
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Part No.HUF76419S3ST_F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET 60V, 29A, 35mOhm N-Channel Mosfet
Datasheet: HUF76419S3ST_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.5107
10 : USD 1.2821
100 : USD 1.0326
500 : USD 0.894
800 : USD 0.7819
2400 : USD 0.7819
4800 : USD 0.7819
9600 : USD 0.7519
24800 : USD 0.7219
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the HUF76419S3ST_F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HUF76419S3ST_F085 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. HUF76419S3ST-F085 N-Channel Logic Level UltraFET Power MOSFET HUF76419S3ST-F085 D D N-Channel Power Trench MOSFET 60V, 29A, 35m Features G Typ r = 26.7m at V = 10V, I = 29A DS(on) GS D G S Typ Q = 23.7nC at V = 10V, I = 29A g(tot) GS D TO-263AB S UIS Capability RoHS Compliant Qualified to AEC Q101 MOSFET Maximum Ratings T = 25C unless otherwise noted J Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 16 V GS Drain Current - Continuous (V =10) (Note 1) T = 25C 29 GS C I A D Pulsed Drain Current T = 25C See Figure4 C E Single Pulse Avalanche Energy (Note 2) 121 mJ AS Power Dissipation 100 W P D o o Derate above 25C0.67W/ C o T , T Operating and Storage Temperature -55 to + 175 C J STG o R Thermal Resistance Junction to Case 1.5 C/W JC o R Maximum Thermal Resistance Junction to Ambient (Note 3) 43 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 76419S HUF76419S3ST -F085 TO-263AB 330mm 24mm 800 units Notes: 1: Current is limited by bondwire configuration. 2: Starting T = 25C, L = 0.45mH, I = 23.2A, V = 60V during inductor charging and V = 0V during time in avalanche J AS DD DD 3: R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the user s board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. 2013 Semiconductor Components Industries, LLC 1 Publication Order Number: August-2017, Rev. 3 HUF76419S3ST-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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