X-On Electronics has gained recognition as a prominent supplier of IAUT300N08S5N012ATMA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IAUT300N08S5N012ATMA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IAUT300N08S5N012ATMA2 Infineon

IAUT300N08S5N012ATMA2 electronic component of Infineon
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See Product Specifications
Part No.IAUT300N08S5N012ATMA2
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 375W; PG-HSOF-8-1
Datasheet: IAUT300N08S5N012ATMA2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.692 ea
Line Total: USD 4.69 
Availability - 3711
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
22
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 5.6886
10 : USD 4.9143
30 : USD 4.4538
100 : USD 3.9876
500 : USD 3.7738
1000 : USD 3.6755

3711
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 4.692
10 : USD 3.4155
100 : USD 2.6795
1000 : USD 2.6795
2000 : USD 2.6795
4000 : USD 2.6795

5635
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 6
Multiples : 1
6 : USD 7.41
10 : USD 5.72
50 : USD 5.1675
100 : USD 4.9075
200 : USD 4.6637
500 : USD 4.3875
1000 : USD 4.16
4000 : USD 3.7375

130
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 48
Multiples : 1
48 : USD 3.6149

1251
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 6
Multiples : 1
6 : USD 7.41
10 : USD 5.72
50 : USD 5.1675
100 : USD 4.9075
200 : USD 4.6637
500 : USD 4.3875
1000 : USD 4.16

   
Manufacturer
Product Category
Technology
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IAUT300N08S5N012ATMA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IAUT300N08S5N012ATMA2 and other electronic components in the MOSFETs category and beyond.

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IAUT300N08S5N012 OptiMOS -5 Power-Transistor Product Summary V 80 V DS R 1.2 m W DS(on) I 300 A D Features N-channel - Enhancement mode PG-HSOF-8-1 Tab AEC qualified MSL1 up to 260C peak reflow 8 1 175C operating temperature Tab Green product (RoHS compliant) 1 Ultra low Rds(on) 8 Drain 100% Avalanche tested Tab Gate Type Package Marking pin 1 PG-HSOF-8-1 5N08012 IAUT300N08S5N012 Source pin 2 - 8 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 300 A D C GS T =100C, C 300 2) V =10V GS 2) I T =25C 1200 Pulsed drain current D,pulse C 2) E I =150A 817 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 300 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 375 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2020-05-04IAUT300N08S5N012 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 0.4 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS 2) V 80 - - V Drain-source breakdown voltage (BR)DSS I =1mA D V V =V , I =275A Gate threshold voltage 2.2 3 3.8 GS(th) DS GS D V =80V, V =0V, DS GS 2) I - 0.1 1 A Zero gate voltage drain current DSS T =25C j V =50V, V =0V, DS GS - 1 20 2) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =6V, I =75A Drain-source on-state resistance - 1.3 1.7 m DS(on) GS D V =10V, I =100A - 1.0 1.2 GS D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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