IAUT300N08S5N012 OptiMOS -5 Power-Transistor Product Summary V 80 V DS R 1.2 m W DS(on) I 300 A D Features N-channel - Enhancement mode PG-HSOF-8-1 Tab AEC qualified MSL1 up to 260C peak reflow 8 1 175C operating temperature Tab Green product (RoHS compliant) 1 Ultra low Rds(on) 8 Drain 100% Avalanche tested Tab Gate Type Package Marking pin 1 PG-HSOF-8-1 5N08012 IAUT300N08S5N012 Source pin 2 - 8 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 300 A D C GS T =100C, C 300 2) V =10V GS 2) I T =25C 1200 Pulsed drain current D,pulse C 2) E I =150A 817 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 300 A AS V Gate source voltage - 20 V GS Power dissipation P T =25C 375 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2020-05-04IAUT300N08S5N012 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 0.4 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS 2) V 80 - - V Drain-source breakdown voltage (BR)DSS I =1mA D V V =V , I =275A Gate threshold voltage 2.2 3 3.8 GS(th) DS GS D V =80V, V =0V, DS GS 2) I - 0.1 1 A Zero gate voltage drain current DSS T =25C j V =50V, V =0V, DS GS - 1 20 2) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =6V, I =75A Drain-source on-state resistance - 1.3 1.7 m DS(on) GS D V =10V, I =100A - 1.0 1.2 GS D