HUF76629D3ST-F085 N-Channel Logic Level UltraFET Power MOSFET HUF76629D3ST -F085 N-Channel Logic Level UltraFET Power MOSFET 100V, 20A, 52m D Features Typ r = 41m at V = 10V, I = 20A DS(on) GS D Typ Q = 39nC at V = 10V, I = 20A g(tot) GS D G UIS Capability RoHS Compliant Qualified to AEC Q101 S Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings T = 25C unless otherwise noted J Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 16 V GS Drain Current - Continuous (V =10) (Note 1) T = 25C 20 GS C I A D Pulsed Drain Current T = 25C See Figure4 C E Single Pulse Avalanche Energy (Note 2) 231 mJ AS Power Dissipation 150 W P D o o Derate above 25C1W/ C o T , T Operating and Storage Temperature -55 to + 175 C J STG o R Thermal Resistance Junction to Case 1 C/W JC o R Maximum Thermal Resistance Junction to Ambient (Note 3) 52 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity HUF76629D3ST HUF76629D3ST-F085 D-PAK(TO-252) 13 12mm 2500 units Notes: 1: Current is limited by bondwire configuration. 2: Starting T = 25C, L = 1.8mH, I = 16A, V = 100V during inductor charging and V = 0V during time in avalanche J AS DD DD 3: R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design while R is determined by the user s board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. 2013 Semiconductor Components Industries, LLC Publication Order number: August-2017, Rev. 3 HUF76629D3ST-F085/D HUF76629D3ST-F085 N-Channel Logic Level UltraFET Power MOSFET Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B Drain to Source Breakdown Voltage I = 250A, V = 0V 100 - - V VDSS D GS o V = 100V, T = 25 C - - 1 A DS J I Drain to Source Leakage Current DSS o V = 0V T = 175 C(Note 4) - - 1 mA GS J I Gate to Source Leakage Current V = 16V - - 100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250A 1.0 1.6 3.0 V GS(th) GS DS D o T = 25 C - 41 52 m I = 20A, J D o V = 10V T = 175 C(Note 4) - 102 128 m GS J r Drain to Source On Resistance DS(on) o T = 25C4755m I = 20A, J D o V = 4.5V T = 175 C(Note 4) 115 135 m GS J Dynamic Characteristics C Input Capacitance - 1280 - pF iss V = 25V, V = 0V, DS GS C Output Capacitance - 214 - pF oss f = 1MHz C Reverse Transfer Capacitance - 33 - pF rss R Gate Resistance f = 1MHz - 2.5 - g Q Total Gate Charge V = 0 to 10V -39 43 nC g(ToT) GS V = 50V DD Q Threshold Gate Charge V = 0 to 2V - 2.3 3 nC I = 20A g(th) GS D Q Gate to Source Gate Charge -3.5 - nC gs Q Gate to Drain Miller Charge - 11 - nC gd Switching Characteristics t Turn-On Time -- 27 ns on t Turn-On Delay Time - 7 - ns d(on) t Rise Time - 12 - ns V = 50V, I = 20A, r DD D V = 10V, R = 8.2 t Turn-Off Delay Time - 38 - ns GS GEN d(off) t Fall Time - 5 - ns f t Turn-Off Time - - 47 ns off Drain-Source Diode Characteristics I = 20A, V = 0V - - 1.25 V SD GS V Source to Drain Diode Voltage SD I = 10A, V = 0V - - 1.0 V SD GS T Reverse Recovery Time -77 99 ns I = 20A, dI /dt = 100A/s, rr F SD V =80V Q Reverse Recovery Charge - 221 305 nC DD rr Notes: 4: The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2