X-On Electronics has gained recognition as a prominent supplier of IPA028N08N3GXKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPA028N08N3GXKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPA028N08N3GXKSA1 Infineon

IPA028N08N3GXKSA1 electronic component of Infineon
IPA028N08N3GXKSA1 Infineon
IPA028N08N3GXKSA1 MOSFETs
IPA028N08N3GXKSA1  Semiconductors

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See Product Specifications
Part No. IPA028N08N3GXKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 80V; 62A; 42W; TO220FP
Datasheet: IPA028N08N3GXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.5625 ea
Line Total: USD 7.56 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 7.5625
10 : USD 5.676
100 : USD 4.917
500 : USD 4.29
1000 : USD 4.07

0
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 6.267
3 : USD 5.6495
4 : USD 4.1123
11 : USD 3.8758

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 50
Multiples : 50
50 : USD 4.7166
500 : USD 4.6223

0
Ship by Tue. 06 May to Mon. 12 May
MOQ : 50
Multiples : 50
50 : USD 6.7189

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
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We are delighted to provide the IPA028N08N3GXKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPA028N08N3GXKSA1 and other electronic components in the MOSFETs category and beyond.

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IPA028N08N3 G MOSFET TM TO-220-FP OptiMOS 3 Power-Transistor , 80 V Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Pin 2 Table 1 Key Performance Parameters Parameter Value Unit Gate Pin 1 V 80 V DS Source R 2.8 m DS(on),max Pin 3 I 89 A D Type / Ordering Code Package Marking Related Links IPA028N08N3 G PG-TO220-FP 028N08N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.0, 2016-06-30TM OptiMOS 3 Power-Transistor , 80 V IPA028N08N3 G Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 3 Electrical characteristics diagrams . 5 Package Outlines 9 Revision History 10 Trademarks . 10 Disclaimer 10 Final Data Sheet 2 Rev. 2.0, 2016-06-30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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