IPA028N08N3GXKSA1 Infineon

IPA028N08N3 G MOSFET TM TO-220-FP OptiMOS 3 Power-Transistor , 80 V Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Pin 2 Table 1 Key Performance Parameters Parameter Value Unit Gate Pin 1 V 80 V DS Source R 2.8 m DS(on),max Pin 3 I 89 A D Type / Ordering Code Package Marking Related Links IPA028N08N3 G PG-TO220-FP 028N08N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.0, 2016-06-30TM OptiMOS 3 Power-Transistor , 80 V IPA028N08N3 G Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 3 Electrical characteristics diagrams . 5 Package Outlines 9 Revision History 10 Trademarks . 10 Disclaimer 10 Final Data Sheet 2 Rev. 2.0, 2016-06-30