IPA057N08N3 G Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 80V OptiMOS3 Power-Transistor IPA057N08N3 G Data Sheet Rev. 2.2 Final Power Management & MultimarketIPA057N08N3 G (TM) OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 5.7 mW DS(on),max Optimized technology for DC/DC converters I 60 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Fully isolated package (2500 VAC 1 minute) Type IPA057N08N3 G Package PG-TO220-FP Marking 057N08N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I Continuous drain current T =25C 60 A D C T =100C 43 C 3) I T =25C 240 Pulsed drain current D,pulse C 4) E I =60A, R =25W 290 mJ Avalanche energy, single pulse AS D GS V Gate source voltage 20 V GS P T =25C Power dissipation 39 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) Current is limited by package with an R =1 K/W in a standard TO-220 package the chip is able thJC to carry 119A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.2 page 1 2015-08-2 7