HUFA76407DK8T F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging JEDEC MS-012AA Ultra Low On-Resistance -r = 0.090, V = 10V DS(ON) GS BRANDING DASH -r = 0.105, V = 5V DS(ON) GS Simulation Models - Temperature Compensated PSPICE and SABER 5 Electrical Models - SPICE and SABER Thermal Impedance Models 1 2 - www.fairchildsemi.com 3 4 Peak Current vs Pulse Width Curve UIS Rating Curve Symbol Transient Thermal Impedance Curve vs Board Mounting Area SOURCE1 (1) DRAIN 1 (8) Switching Time vs R Curves GATE1 (2) GS DRAIN 1 (7) Qualified to AEC Q101 RoHS Compliant SOURCE2 (3) DRAIN 2 (6) Ordering Information GATE2 (4) DRAIN 2 (5) PART NUMBER PACKAGE BRAND HUFA76407DK8T F085 MS-012AA 76407DK8 NOTE: When ordering, use the entire part number. Add the suffix T F085 to obtain the variant in tape and reel, e.g., HUFA76407DK8T F085. o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified A HUFA76407DK8T F085 UNITS Drain to Source Voltage (Note 1) . V 60 V DSS Drain to Gate Voltage (R = 20k ) (Note 1) . V 60 V GS DGR Gate to Source Voltage . V 16 V GS Drain Current o Continuous (T = 25 C, V = 5V) (Note 2) . I 3.5 A A GS D o Continuous (T = 25 C, V = 10V) (Figure 2) (Note 2) I 3.8 A A GS D o Continuous (T = 100 C, V = 5V) (Note 3) I 1.0 A A GS D o Continuous (T = 100 C, V = 4.5V) (Figure 2) (Note 3) I 1.0 A A GS D Pulsed Drain Current I Figure 4 DM Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation (Note 2) . P 2.5 W D o o Derate Above 25 C 20 mW/ C o Operating and Storage Temperature . T , T -55 to 150 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s . T 300 C L o Package Body for 10s, See Techbrief TB334 . T 260 C pkg NOTES: o o 1. T = 25 C to 125 C. J o 2 2 2. 50 C/W measured using FR-4 board with 0.76 in (490.3 mm ) copper pad at 1 second. o 2 2 3. 228 C/W measured using FR-4 board with 0.006 in (3.87 mm ) copper pad at 1000 seconds. CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: HUFA76407DK8T F085 o Electrical Specifications T = 25 C, Unless Otherwise Specified A PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BV I = 250 A, V = 0V (Figure 12) 60 - - V DSS D GS o I = 250 A, V = 0V , T = -40 C (Figure 12) 55 - - V D GS A Zero Gate Voltage Drain Current I V = 55V, V = 0V - - 1 A DSS DS GS o V = 50V, V = 0V, T = 150 C - - 250 A DS GS A Gate to Source Leakage Current I V = 16V - - 100 nA GSS GS ON STATE SPECIFICATIONS Gate to Source Threshold Voltage V V = V , I = 250A (Figure 11) 1 - 3 V GS(TH) GS DS D Drain to Source On Resistance r I = 3.8A, V = 10V (Figures 9, 10) - 0.075 0.090 DS(ON) D GS I = 1.0A, V = 5V (Figure 9) - 0.088 0.105 D GS I = 1.0A, V = 4.5V (Figure 9) - 0.092 0.110 D GS THERMAL SPECIFICATIONS 2 2 o Thermal Resistance Junction to R Pad Area = 0.76 in (490.3 mm ) (Note 2) - - 50 C/W JA Ambient 2 2 o Pad Area = 0.027 in (17.4 mm ) (Figure 23) - - 191 C/W 2 2 o Pad Area = 0.006 in (3.87 mm ) (Figure 23) - - 228 C/W SWITCHING SPECIFICATIONS (V = 4.5V) GS Turn-On Time t V = 30V, I = 1.0A - - 57 ns ON DD D V = 4.5V, R = 27 GS GS Turn-On Delay Time t -8 - ns d(ON) (Figures 15, 21, 22) Rise Time t -30- ns r Turn-Off Delay Time t -25- ns d(OFF) Fall Time t -25- ns f Turn-Off Time t - - 75 ns OFF SWITCHING SPECIFICATIONS (V = 10V) GS Turn-On Time t V = 30V, I = 3.8A - - 24 ns ON DD D V = 10V, GS Turn-On Delay Time t -5 - ns d(ON) R = 30 GS Rise Time t -11- ns r (Figures 16, 21, 22) Turn-Off Delay Time t -46- ns d(OFF) Fall Time t -31- ns f Turn-Off Time t - - 116 ns OFF GATE CHARGE SPECIFICATIONS Total Gate Charge Q V = 0V to 10V V = 30V, - 9.4 11.2 nC g(TOT) GS DD I = 1.0A, D Gate Charge at 5V Q V = 0V to 5V - 5.3 6.4 nC g(5) GS I = 1.0mA g(REF) Threshold Gate Charge Q V = 0V to 1V - 0.42 0.5 nC g(TH) GS (Figures 14, 19, 20) Gate to Source Gate Charge Q -1.05- nC gs Gate to Drain Miller Charge Q -2.4 - nC gd CAPACITANCE SPECIFICATIONS Input Capacitance C V = 25V, V = 0V, - 330 - pF ISS DS GS f = 1MHz Output Capacitance C - 100 - pF OSS (Figure 13) Reverse Transfer Capacitance C -18- pF RSS Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V I = 3.8A - - 1.25 V SD SD I = 1.0A - - 1.00 V SD Reverse Recovery Time t I = 1.0A, dI /dt = 100A/s--48ns rr SD SD Reverse Recovered Charge Q I = 1.0A, dI /dt = 100A/s--89nC RR SD SD HUFA76407DK8T F085 Rev. C1 2 www.fairchildsemi.com