IPA126N10N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 12.6 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 35 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPA126N10N3 G Package PG-TO220-FP Marking 126N10N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I Continuous drain current T =25C 35 A D C T =100C 25 C 2) I T =25C 140 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =35A, R =25W 90 mJ AS D GS V Gate source voltage 20 V GS Power dissipation P T =25C 33 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.3 page 1 2013-08-27IPA126N10N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 4.5 K/W thJC Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =45A Gate threshold voltage 2 2.7 3.5 GS(th) DS GS D V =100V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =100V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 1 100 nA GSS GS DS R V =10V, I =35A Drain-source on-state resistance - 10.9 12.6 mW DS(on) GS D V =6V, I =18A - 13.5 24 GS D Gate resistance R - 1.1 - G W V >2 I R , DS D DS(on)max Transconductance g 25 50 - S fs I =35A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2013-08-27