MOSFET Power, N-Channel, UltraFET 75 V, 150 A, 0,016 HUFA75852G3-F085 Features www.onsemi.com Ultra Low On Resistance R = 0.016 , V = 10 V DS(ON) GS Peak Current vs Pulse Width Curve D UIS Rating Curve AECQ101 Qualified and PPAP Capable This Device is PbFree and is RoHS Compliant G S DRAIN (TAB) G D S JEDEC TO247 CASE 340CK MARKING DIAGRAM Y&Z&3&K 75852G Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot 75852G = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: April, 2020 Rev. 4 HUFA75852G3F085/DHUFA75852G3 F085 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage (Note 1) 150 V DSS V Gate to Gate Voltage (R = 20 k ) (Note 1) 150 V DGR GS V Gate to Source Voltage 20 V GS I Drain Current Continuous (T = 25C, V = 10 V) (Figure 2) 75 A D C GS Drain Current Continuous (T = 100C, V = 10 V) (Figure 2) 75 A C GS I Pulsed Drain Current Figure 4 DM UIS Pulsed Avalanche Rating Figures 6, 14, 15 P Power Dissipation (T = 25C) 500 W D C Derate Above 25C 3.33 W/C T , T Operating and Storage Temperature 55 to +175 C J STG T Maximum Temperature Leads at 0.063 in (1.6 mm) from Case for 10 s 300 C L for Soldering T Package Body for 10 s 260 C pkg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Starting T = 25C to 150C. J PACKAGE MARKING AND ORDERING INFORMATION Part Number Package Brand HUFA75852G3F085 TO247 75852G www.onsemi.com 2