NRTST40H100CT Very Low Forward Voltage Trench-based Schottky Rectifier Features www.onsemi.com Fine Lithography Trenchbased Schottky Technology for Very Low Forward Voltage and Low Leakage VERY LOW FORWARD VOLT- Fast Switching with Exceptional Temperature Stability AGE, SCHOTTKY BARRIER Low Power Loss and Lower Operating Temperature RECTIFIERS 40 AMPERES, Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance 100 VOLTS High Surge Capability These are PbFree Devices PIN CONNECTIONS 1 Typical Applications 2, 4 Switching Power Supplies including Notebook / Netbook Adapters, 3 ATX and Flat Panel Display High Frequency and DCDC Converters 4 Freewheeling and ORing diodes Reverse Battery Protection Instrumentation Mechanical Characteristics Case: Epoxy, Molded TO220AB Epoxy Meets Flammability Rating UL 940 0.125 in CASE 221A 1 Finish: All External Surfaces Corrosion Resistant and Terminal 2 STYLE 6 3 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Maximum for 10 sec MARKING DIAGRAM AYWW TS40H100G AKA TO220AB A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 0 NRTST40H100CT/DNRTST40H100CT MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 118C) Per device 40 R C (Rated V , T = 131C) Per diode 20 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 113C) Per device 80 R C (Rated V , Square Wave, 20 kHz, T = 128C) Per diode 40 R C Nonrepetitive Peak Surge Current I 250 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 55 to +150 C J Storage Temperature T 55 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol NRTST40H100CTG Unit Maximum Thermal Resistance per Device (Note 1) JunctiontoCase R 1.0 C/W JC JunctiontoAmbient R 69.3 C/W JA 2 1. Assumes 150 mm 1 oz. copper band pad, on a FR4 board. ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 10 A, T = 25C) 0.58 F J (I = 20 A, T = 25C) 0.73 0.76 F J (I = 10 A, T = 125C) 0.53 F J (I = 20 A, T = 125C) 0.65 0.68 F J Maximum Instantaneous Reverse Current (Note 2) I R (V = 70 V, T = 25C) 4 A R J (V = 70 V, T = 125C) 4 mA R J (Rated dc Voltage, T = 25C) 16 50 A J (Rated dc Voltage, T = 125C) 11 30 mA J Diode Capacitance C d (Rated dc Voltage, T = 25C, f = 1 MHz) 147 pF J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping NRTST40H100CTG TO220AB 50 Units / Rail (PbFree) www.onsemi.com 2