NTD18N06L, NTDV18N06L MOSFET Power, N-Channel, Logic Level, DPAK 18 A, 60 V www.onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge V R TYP I MAX (BR)DSS DS(on) D circuits. 18 A 60 V 54 m 5.0 V Features (Note 1) AEC Q101 Qualified NTDV18N06L D These Devices are PbFree and are RoHS Compliant Typical Applications NChannel Power Supplies G Converters Power Motor Controls S Bridge Circuits 4 MAXIMUM RATINGS (T = 25C unless otherwise noted) J 2 Rating Symbol Value Unit 1 3 DraintoSource Voltage V 60 Vdc DSS DPAK DraintoGate Voltage (R = 10 M ) V 60 Vdc GS DGR CASE 369C GatetoSource Voltage Vdc STYLE 2 Continuous V 15 GS Nonrepetitive (t 10 ms) V 20 p GS MARKING DIAGRAM Drain Current & PIN ASSIGNMENT Continuous T = 25C I 18 Adc A D Continuous T = 100C I 10 A D 4 Single Pulse (t 10 s) I 54 Apk DM p Drain Total Power Dissipation T = 25C P 55 W A D Derate above 25C 0.36 W/C Total Power Dissipation T = 25C (Note 2) 2.1 W A Operating and Storage Temperature Range T , T 55 to C J stg +175 Single Pulse DraintoSource Avalanche E 72 mJ AS 2 1 Energy Starting T = 25C 3 J Drain Gate (V = 50 Vdc, V = 5.0 Vdc, Source DD GS L = 1.0 mH, I (pk) = 12 A, V = 60 Vdc) L DS A = Assembly Location* Thermal Resistance C/W 18N6L = Device Code JunctiontoCase R 2.73 JC Y = Year JunctiontoAmbient (Note 1) R 100 JA WW = Work Week JunctiontoAmbient (Note 2) R 71.4 JA G = PbFree Device Maximum Lead Temperature for Soldering T 260 C L * The Assembly Location code (A) is front side Purposes, 1/8 from case for 10 seconds optional. In cases where the Assembly Location is Stresses exceeding those listed in the Maximum Ratings table may damage the stamped in the package, the front side assembly device. If any of these limits are exceeded, device functionality should not be code may be blank. assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using the minimum recommended pad size. ORDERING INFORMATION 2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size. See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 8 NTD18N06L/D AYWW 18 N6LGNTD18N06L, NTDV18N06L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 70 GS D Temperature Coefficient (Positive) 57.6 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 15 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) 1.0 1.8 2.0 (V = V , I = 250 Adc) DS GS D 5.2 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 5.0 Vdc, I = 9.0 Adc) 54 65 GS D Static DraintoSource OnResistance (Note 3) V Vdc DS(on) (V = 5.0 Vdc, I = 18 Adc) 1.0 1.3 GS D (V = 5.0 Vdc, I = 9.0 Adc, T = 150C) 0.86 GS D J Forward Transconductance (Note 3) (V = 7.0 Vdc, I = 9.0 Adc) g 13.5 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 482 675 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 166 230 oss f = 1.0 MHz) Transfer Capacitance C 56 80 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 9.9 20 ns d(on) (V = 30 Vdc, I = 18 Adc, DD D Rise Time t 79 160 r V = 5.0 Vdc, GS TurnOff Delay Time t 19 40 d(off) R = 9.1 ) (Note 3) G Fall Time t 38 80 f Gate Charge Q 11 22 nC T (V = 48 Vdc, I = 18 Adc, DS D Q 3.2 1 V = 5.0 Vdc) (Note 3) GS Q 6.5 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 18 Adc, V = 0 Vdc) (Note 3) V 0.94 1.15 Vdc S GS SD (I = 18 Adc, V = 0 Vdc, T = 150C) 0.83 S GS J Reverse Recovery Time t 41 ns rr (I = 18 Adc, V = 0 Vdc, S GS t 26 a dI /dt = 100 A/ s) (Note 3) S t 15 b Reverse Recovery Stored Charge Q 0.057 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD18N06LT4G DPAK 2500 / Tape & Reel (PbFree) NTDV18N06LT4G DPAK 2500 / Tape & Reel (PbFree) STD18N06LT4GVF01 DPAK 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2