NTB25P06, NVB25P06 MOSFET P-Channel, 2 D PAK -60 V, -27.5 A Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. NTB25P06, NVB25P06 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V V (BR)DSS (V = 0 V, I = 250 A) 60 GS D mV/C (Positive Temperature Coefficient) 64 Zero Gate Voltage Drain Current I A DSS (V = 0 V, V = 60 V, T = 25C) 10 GS DS J (V = 0 V, V = 60 V, , T = 150C) 100 GS DS J GateBody Leakage Current (V = 15 V, V = 0 V) I 100 nA GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V GS(th) (V = V I = 250 A) 2.0 2.8 4.0 DS GS, D mV/C (Negative Threshold Temperature Coefficient) 6.2 Static DrainSource OnState Resistance R DS(on) (V = 10 V, I = 12.5 A) 0.065 0.075 GS D (V = 10 V, I = 25 A) 0.070 0.082 GS D Forward Transconductance gFS Mhos (V = 10 V, I = 12.5 A) 13 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 1200 1680 pF iss (V = 25 V, V = 0 V, DS GS Output Capacitance C 345 480 oss F = 1.0 MHz) Reverse Transfer Capacitance C 90 180 rss SWITCHING CHARACTERISTICS (Notes 3 & 4) TurnOn Delay Time t 14 24 ns d(on) Rise Time t 72 118 ns r (V = 30 V, I = 25 A, DD D V = 10 V R = 9.1 ) GS G TurnOff Delay Time t 43 68 ns d(off) Fall Time t 190 320 ns f Gate Charge Q 33 50 nC T (V = 48 V, I = 25 A, DS D Q 6.5 1 V = 10 V) GS Q 15 2 BODYDRAIN DIODE RATINGS (Note 3) Diode Forward OnVoltage (I = 25 A, V = 0 V) V 1.8 2.5 V S GS SD (I = 25 A, V = 0 V, T = 150C) 1.4 S GS J Reverse Recovery Time t 70 ns rr (I = 25 A, V = 0 V, S GS t 50 a dI /dt = 100 A/ s) S t 20 b Reverse Recovery Stored Charge Q 0.2 C RR 3. Indicates Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.