X-On Electronics has gained recognition as a prominent supplier of NTB45N06T4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTB45N06T4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTB45N06T4G ON Semiconductor

Name: NTB45N06T4G
Brand: ON Semiconductor
SKU: NTB45N06T4G_ON Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

NTB45N06T4G electronic component of ON Semiconductor

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Part No.	NTB45N06T4G
Manufacturer:	ON Semiconductor
Category:	MOSFETs
Description:	MOSFET 60V 45A N-Channel
Datasheet:	NTB45N06T4G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

800: USD 0.5954 ea
Line Total: USD 476.32

Availability - 0

MOQ: 800 Multiples: 800
Pack Size: 800

NTB45N06T4G More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 1.6597 10 : USD 1.5713 25 : USD 1.4757 100 : USD 0.95 500 : USD 0.9404 800 : USD 0.8765 2400 : USD 0.8677

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 1.8117 10 : USD 1.5543 100 : USD 1.3322

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 800 Multiples : 800	800 : USD 0.5954 1600 : USD 0.5954 2400 : USD 0.5954 3200 : USD 0.5954 4000 : USD 0.5954

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 1.0184

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 4.5875 10 : USD 1.6545 25 : USD 1.5643 100 : USD 1.3336 500 : USD 1.093 800 : USD 0.9044 2400 : USD 0.8222 4800 : USD 0.7932

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 8 Multiples : 8	8 : USD 0.9515 100 : USD 0.8836 250 : USD 0.866

We are delighted to provide the NTB45N06T4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTB45N06T4G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

NTB45N06, NTBV45N06 MOSFET N-Channel, 2 D PAK 45 A, 60 V, 26 m Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge NTB45N06, NTBV45N06 2. When surface mounted to an FR4 board using the minimum recommended 2 pad size, (Cu Area 0.412 in ).

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Aptina / ON Semiconductor may also be referenced as

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ON SEMI
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ON SEMICONDUCTOR
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Manufacturer ON Semiconductor ON Semiconductor
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 45 A 45 A
Vds - Drain-Source Breakdown Voltage 60 V 60 V
Rds On - Drain-Source Resistance 26 mOhms 26 mOhms
Transistor Polarity n - channel n - channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 125 W 125 W
Mounting Style smd/smt smd/smt
Package / Case D2PAK D2PAK
Packaging Reel Reel
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Channel Mode enhancement enhancement
Configuration single single
Series ntb45n06 ntb45n06
Brand On Semiconductor On Semiconductor
Continuous Drain Current 45 A 45 A
Drain-Source Breakdown Voltage 60 V 60 V
Forward Transconductance - Min 16.6 s 16.6 s
Gate-Source Breakdown Voltage +/- 20 V +/- 20 V
Power Dissipation 125 W 125 W
Rds On 26 mohms 26 mohms
Fall Time 106 ns 106 ns
Rise Time 101 ns 101 ns
Factory Pack Quantity : 800 800
Typical Turn-Off Delay Time 33 ns 33 ns
Height 4.83 mm 4.83 mm
Length 10.29 mm 10.29 mm
Transistor Type 1 n - channel 1 n - channel
Type mosfet mosfet
Width 9.65 mm 9.65 mm
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type mosfet mosfet
Subcategory Mosfets Mosfets