X-On Electronics has gained recognition as a prominent supplier of NTB6413ANT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTB6413ANT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTB6413ANT4G ON Semiconductor

NTB6413ANT4G electronic component of ON Semiconductor
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Part No.NTB6413ANT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET D2PAK 100V 40A 30MO
Datasheet: NTB6413ANT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.068 ea
Line Total: USD 2.07 
Availability - 2449
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2449
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.068
10 : USD 1.518
100 : USD 1.155
500 : USD 1.0846
800 : USD 1.0208
2400 : USD 1.001
4800 : USD 0.9801
9600 : USD 0.9581

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTB6413ANT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTB6413ANT4G and other electronic components in the MOSFETs category and beyond.

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NTB6413AN, NTP6413AN, NVB6413AN MOSFET Power, N-Channel 100 V, 42 A, 28 m www.onsemi.com Features Low R DS(on) I MAX D High Current Capability V R MAX (Note 1) (BR)DSS DS(ON) 100% Avalanche Tested 100 V 28 m 10 V 42 A NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable NChannel These Devices are PbFree and are RoHS Compliant D MAXIMUM RATINGS (T = 25C Unless otherwise specified) J Parameter Symbol Value Unit G DraintoSource Voltage V 100 V DSS GatetoSource Voltage Continuous V 20 V GS S Continuous Drain Steady T = 25C I 42 A C D 4 Current R State JC T = 100C 28 C 4 Power Dissipation Steady T = 25C P 136 W C D R State JC 1 2 Pulsed Drain Current t = 10 s I 178 A p DM 3 Operating Junction and Storage Temperature T , T 55 to C J stg 2 TO220AB D PAK Range +175 CASE 221A CASE 418B 1 Source Current (Body Diode) I 42 A STYLE 5 STYLE 2 S 2 3 Single Pulse DraintoSource Avalanche E 200 mJ AS Energy (V = 50 Vdc, V = 10 Vdc, DD GS MARKING DIAGRAM I = 36.5 A, L = 0.3 mH, R = 25 ) L(pk) G & PIN ASSIGNMENT Lead Temperature for Soldering T 260 C L 4 4 Purposes, 1/8 from Case for 10 Seconds Drain Drain THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit NTB JunctiontoCase (Drain) Steady State R 1.1 C/W NTP 6413ANG JC 6413ANG AYWW JunctiontoAmbient (Note 1) R 35 JA AYWW Stresses exceeding those listed in the Maximum Ratings table may damage the 2 1 3 1 3 device. If any of these limits are exceeded, device functionality should not be Drain Gate Source Gate Source assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 sq in pad size, 2 (Cu Area 1.127 sq in 2 oz including traces). 6413AN = Specific Device Code Drain G = PbFree Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 4 NTB6413AN/DNTB6413AN, NTP6413AN, NVB6413AN ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage Temper- V /T 115 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 8.1 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I = 42 A 25.6 28 m DS(on) GS D Forward Transconductance g V = 5 V, I = 20 A 17.9 S FS GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1800 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 280 oss f = 1 MHz Reverse Transfer Capacitance C 100 rss Total Gate Charge Q 51 nC G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 10 V, V = 80 V, GS DS GatetoSource Charge Q 10 GS I = 42 A D GatetoDrain Charge Q 26 GD Plateau Voltage V 5.8 V GP Gate Resistance R 2.4 G SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 13 ns d(on) Rise Time t 84 r V = 10 V, V = 80 V, GS DD I = 42 A, R = 6.2 D G TurnOff Delay Time t 52 d(off) Fall Time t 71 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.92 1.3 V SD J I = 42 A S T = 125C 0.83 J Reverse Recovery Time t 73 ns rr Charge Time t 56 a V = 0 V, I = 42 A, GS S dI /dt = 100 A/ s SD Discharge Time t 17 b Reverse Recovery Charge Q 230 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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