NTB6413AN, NTP6413AN, NVB6413AN MOSFET Power, N-Channel 100 V, 42 A, 28 m www.onsemi.com Features Low R DS(on) I MAX D High Current Capability V R MAX (Note 1) (BR)DSS DS(ON) 100% Avalanche Tested 100 V 28 m 10 V 42 A NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable NChannel These Devices are PbFree and are RoHS Compliant D MAXIMUM RATINGS (T = 25C Unless otherwise specified) J Parameter Symbol Value Unit G DraintoSource Voltage V 100 V DSS GatetoSource Voltage Continuous V 20 V GS S Continuous Drain Steady T = 25C I 42 A C D 4 Current R State JC T = 100C 28 C 4 Power Dissipation Steady T = 25C P 136 W C D R State JC 1 2 Pulsed Drain Current t = 10 s I 178 A p DM 3 Operating Junction and Storage Temperature T , T 55 to C J stg 2 TO220AB D PAK Range +175 CASE 221A CASE 418B 1 Source Current (Body Diode) I 42 A STYLE 5 STYLE 2 S 2 3 Single Pulse DraintoSource Avalanche E 200 mJ AS Energy (V = 50 Vdc, V = 10 Vdc, DD GS MARKING DIAGRAM I = 36.5 A, L = 0.3 mH, R = 25 ) L(pk) G & PIN ASSIGNMENT Lead Temperature for Soldering T 260 C L 4 4 Purposes, 1/8 from Case for 10 Seconds Drain Drain THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit NTB JunctiontoCase (Drain) Steady State R 1.1 C/W NTP 6413ANG JC 6413ANG AYWW JunctiontoAmbient (Note 1) R 35 JA AYWW Stresses exceeding those listed in the Maximum Ratings table may damage the 2 1 3 1 3 device. If any of these limits are exceeded, device functionality should not be Drain Gate Source Gate Source assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 sq in pad size, 2 (Cu Area 1.127 sq in 2 oz including traces). 6413AN = Specific Device Code Drain G = PbFree Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 4 NTB6413AN/DNTB6413AN, NTP6413AN, NVB6413AN ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage Temper- V /T 115 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 8.1 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I = 42 A 25.6 28 m DS(on) GS D Forward Transconductance g V = 5 V, I = 20 A 17.9 S FS GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1800 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 280 oss f = 1 MHz Reverse Transfer Capacitance C 100 rss Total Gate Charge Q 51 nC G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 10 V, V = 80 V, GS DS GatetoSource Charge Q 10 GS I = 42 A D GatetoDrain Charge Q 26 GD Plateau Voltage V 5.8 V GP Gate Resistance R 2.4 G SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 13 ns d(on) Rise Time t 84 r V = 10 V, V = 80 V, GS DD I = 42 A, R = 6.2 D G TurnOff Delay Time t 52 d(off) Fall Time t 71 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.92 1.3 V SD J I = 42 A S T = 125C 0.83 J Reverse Recovery Time t 73 ns rr Charge Time t 56 a V = 0 V, I = 42 A, GS S dI /dt = 100 A/ s SD Discharge Time t 17 b Reverse Recovery Charge Q 230 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2