NTD2955, NVD2955 Power MOSFET 60 V, 12 A, PChannel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for lowvoltage, high speed switching applications in power supplies, converters, and power NTD2955, NVD2955 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS 60 (V = 0 Vdc, I = 0.25 mA) GS D 67 mV/C (Positive Temperature Coefficient) Zero Gate Voltage Drain Current I Adc DSS 10 (V = 0 Vdc, V = 60 Vdc, T = 25C) GS DS J 100 (V = 0 Vdc, V = 60 Vdc, T = 150C) GS DS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V Vdc GS(th) 2.0 2.8 4.0 (V = V , I = 250 Adc) DS GS D 4.5 mV/C (Negative Temperature Coefficient) Static DrainSource OnState Resistance R DS(on) 0.155 0.180 (V = 10 Vdc, I = 6.0 Adc) GS D DraintoSource OnVoltage V Vdc DS(on) 1.86 2.6 (V = 10 Vdc, I = 12 Adc) GS D 2.0 (V = 10 Vdc, I = 6.0 Adc, T = 150C) GS D J Forward Transconductance (V = 10 Vdc, I = 6.0 Adc) 8.0 Mhos DS D gFS DYNAMIC CHARACTERISTICS Input Capacitance C 500 750 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 150 250 oss F = 1.0 MHz) Reverse Transfer Capacitance C 50 100 rss SWITCHING CHARACTERISTICS (Notes 3 and 4) TurnOn Delay Time t 10 20 ns d(on) Rise Time t 45 85 r (V = 30 Vdc, I = 12 A, DD D V = 10 V, R = 9.1 ) GS G TurnOff Delay Time t 26 40 d(off) Fall Time t 48 90 f Gate Charge Q 15 30 nC T (V = 48 Vdc, V = 10 Vdc, DS GS Q 4.0 GS I = 12 A) D Q 7.0 GD DRAINSOURCE DIODE CHARACTERISTICS (Note 3) Diode Forward OnVoltage V Vdc SD 1.6 2.5 (I = 12 Adc, V = 0 V) S GS 1.3 (I = 12 Adc, V = 0 V, T = 150C) S GS J Reverse Recovery Time t 50 ns rr (I = 12 A, dI /dt = 100 A/ s ,V = 0 V) S S GS t 40 a t 10 b Reverse Recovery Stored Charge Q 0.10 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Indicates Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature.