X-On Electronics has gained recognition as a prominent supplier of NTD3055L104G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD3055L104G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD3055L104G ON Semiconductor

NTD3055L104G electronic component of ON Semiconductor
NTD3055L104G ON Semiconductor
NTD3055L104G MOSFETs
NTD3055L104G  Semiconductors

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See Product Specifications
Part No. NTD3055L104G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 12A N-Channel
Datasheet: NTD3055L104G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3002 ea
Line Total: USD 0.3 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3002
5 : USD 0.2946
50 : USD 0.2719
250 : USD 0.2322
1000 : USD 0.213
2500 : USD 0.2084

0
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 1336
Multiples : 1
1336 : USD 0.2291

0
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 29
Multiples : 1
29 : USD 0.8282

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD3055L104G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD3055L104G and other electronic components in the MOSFETs category and beyond.

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NTD3055L104, NTDV3055L104 Power MOSFET 12 A, 60 V, Logic Level NChannel DPAK/IPAK Designed for low voltage, high speed switching applications in NTD3055L104, NTDV3055L104 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 70 GS D Temperature Coefficient (Positive) 62.9 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 15 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) (V = V , I = 250 Adc) 1.0 1.6 2.0 DS GS D 4.2 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 5.0 Vdc, I = 6.0 Adc) 89 104 GS D Static DraintoSource OnVoltage (Note 3) V Vdc DS(on) (V = 5.0 Vdc, I = 12 Adc) 0.98 1.50 GS D (V = 5.0 Vdc, I = 6.0 Adc, T = 150C) 0.86 GS D J Forward Transconductance (Note 3) (V = 8.0 Vdc, I = 6.0 Adc) g 9.1 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 316 440 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 105 150 oss f = 1.0 MHz) Transfer Capacitance C 35 70 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 9.2 20 ns d(on) Rise Time t 104 210 (V = 30 Vdc, I = 12 Adc, r DD D V = 5.0 Vdc, R = 9.1 ) (Note 3) TurnOff Delay Time GS G t 19 40 d(off) Fall Time t 40.5 80 f Gate Charge Q 7.4 20 nC T (V = 48 Vdc, I = 12 Adc, DS D Q 2.0 1 V = 5.0 Vdc) (Note 3) GS Q 4.0 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 12 Adc, V = 0 Vdc) (Note 3) V 0.95 1.2 Vdc S GS SD (I = 12 Adc, V = 0 Vdc, T = 150C) 0.82 S GS J Reverse Recovery Time t 35 ns rr (I = 12 Adc, V = 0 Vdc, S GS t 21 a dI /dt = 100 A/ s) (Note 3) S t 14 b Reverse Recovery Stored Charge Q 0.04 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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