X-On Electronics has gained recognition as a prominent supplier of NTD4302T4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD4302T4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD4302T4G ON Semiconductor

NTD4302T4G electronic component of ON Semiconductor
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Part No.NTD4302T4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET 30V 68A N-Channel
Datasheet: NTD4302T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6772 ea
Line Total: USD 0.68 
Availability - 19
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6772
10 : USD 0.6762

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the NTD4302T4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD4302T4G and other electronic components in the MOSFETs category and beyond.

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NTD4302 MOSFET Power, N-Channel, DPAK/IPAK 68 A, 30 V Features NTD4302 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 250 A) 30 GS D Positive Temperature Coefficient 25 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 30 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 30 Vdc, T = 125C) 10 GS DS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) 1.0 1.9 3.0 (V = V , I = 250 Adc) DS GS D 3.8 Negative Temperature Coefficient Static DrainSource OnState Resistance R DS(on) (V = 10 Vdc, I = 20 Adc) 0.0078 0.010 GS D (V = 10 Vdc, I = 10 Adc) 0.0078 0.010 GS D (V = 4.5 Vdc, I = 5.0 Adc) 0.010 0.013 GS D Forward Transconductance (V = 15 Vdc, I = 10 Adc) gFS 20 Mhos DS D DYNAMIC CHARACTERISTICS Input Capacitance C 2050 2400 pF iss (V = 24 Vdc, V = 0 Vdc, DS GS Output Capacitance C 640 800 oss f = 1.0 MHz) Reverse Transfer Capacitance C 225 310 rss SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 20 ns d(on) (V = 25 Vdc, I = 1.0 Adc, DD D Rise Time t 15 25 r V = 10 Vdc, GS TurnOff Delay Time t 85 130 d(off) R = 6.0 ) G Fall Time t 55 90 f TurnOn Delay Time t 11 20 ns d(on) (V = 25 Vdc, I = 1.0 Adc, DD D Rise Time t 13 20 r V = 10 Vdc, GS TurnOff Delay Time t 55 90 d(off) R = 2.5 ) G Fall Time t 40 75 f TurnOn Delay Time t 15 ns d(on) (V = 24 Vdc, I = 20 Adc, DD D Rise Time t 25 r V = 10 Vdc, GS TurnOff Delay Time t 40 d(off) R = 2.5 ) G Fall Time t 58 f Gate Charge Q 55 80 nC T (V = 24 Vdc, I = 2.0 Adc, DS D Q (Q1) 5.5 gs V = 10 Vdc) GS Q (Q2) 15 gd BODYDRAIN DIODE RATINGS (Note 5) Diode Forward OnVoltage V Vdc SD (I = 2.3 Adc, V = 0 Vdc) 0.75 1.0 S GS (I = 20 Adc, V = 0 Vdc) 0.90 S GS (I = 2.3 Adc, V = 0 Vdc, T = 125C) 0.65 S GS J Reverse Recovery Time t 39 65 ns rr (I = 2.3 Adc, V = 0 Vdc, S GS t 20 a dI /dt = 100 A/ s) S t 19 b Reverse Recovery Stored Charge Q 0.043 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Indicates Pulse Test: Pulse Width = 300 sec max, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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