ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTD5862N, NTP5862N MOSFET Power, N-Channel 60 V, 98 A, 5.7 m Features www.onsemi.com Low R DS(on) V R MAX I MAX (BR)DSS DS(on) D High Current Capability 60 V 5.7 m 10 V 98 A 100% Avalanche Tested These Devices are PbFree, Halogen Free and are RoHS Compliant D MAXIMUM RATINGS (T = 25C unless otherwise noted) J NChannel Parameter Symbol Value Unit G DraintoSource Voltage V 60 V DSS GatetoSource Voltage Continuous V 20 V S GS GatetoSource Voltage V 30 V 4 GS NonRepetitive (t < 10 s) p 4 Continuous Drain T = 25C I 98 A C D Current (R ) JC 4 Steady T = 100C 69 (Note 1) C State Power Dissipation T = 25C P 115 W 1 C D 2 1 1 2 (R ) 2 JC 3 3 3 Pulsed Drain Current t = 10 s I 335 A p DM DPAK IPAK TO220 CASE 369C CASE 369D CASE 221A Operating Junction and Storage Temperature T , T 55 to C J stg 175 STYLE 2 STYLE 2 STYLE 5 Source Current (Body Diode) I 96 A S MARKING DIAGRAMS & PIN ASSIGNMENT Single Pulse DraintoSource Avalanche E 205 mJ AS 4 Energy (L = 0.3 mH) Drain 4 4 Lead Temperature for Soldering Purposes T 260 C L Drain Drain (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NTP 5862NG THERMAL RESISTANCE MAXIMUM RATINGS AYWW 2 Drain 1 3 Parameter Symbol Value Unit 1 3 Gate Source Gate Source JunctiontoCase (Drain) R 1.3 C/W JC 1 2 3 Gate Drain Source JunctiontoAmbient Steady State (Note 2) R 37 2 JA Drain 1. Limited by package to 50 A continuous. 2. Surfacemounted on FR4 board using 1 in sq pad size A = Assembly Location* (Cu area = 1.127 in sq 2 oz including traces. Y = Year WW = Work Week 5862N = Device Code G = PbFree Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 4 NTD5862N/D AYWW 58 62NG AYWW 58 62NG