NTD5C668NL Power MOSFET 60 V, 8.9 m , 48 A, Single NChannel Features Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V R I (BR)DSS DS(on) D 8.9 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J 60 V 49 A Parameter Symbol Value Unit 12.8 m 4.5 V DraintoSource Voltage V 60 V DSS D GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 48 A C D rent R (Notes 1 & 3) JC T = 100C 34 C Steady State G Power Dissipation R T = 25C P 42 W JC C D (Note 1) T = 100C 21 C S Continuous Drain Cur- T = 25C I 15 A A D rent R (Notes 1, 2 & NCHANNEL MOSFET JA T = 100C 10 3) A Steady State Power Dissipation R T = 25C P 4.0 W 4 JA A D (Notes 1 & 2) T = 100C 2.0 A 2 1 Pulsed Drain Current T = 25C, t = 10 s I 250 A A p DM 3 Operating Junction and Storage Temperature T , T 55 to C J stg 175 DPAK CASE 369C Source Current (Body Diode) I 25 A S STYLE 2 Single Pulse DraintoSource Avalanche E 104 mJ AS Energy (I = 3 A) L(pk) MARKING DIAGRAM Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) & PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the 4 device. If any of these limits are exceeded, device functionality should not be Drain assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) (Note 1) R 3.6 C/W JC 2 JunctiontoAmbient Steady State (Note 2) 37 R JA Drain 1 3 Gate Source 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. A = Assembly Location 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. Y = Year 3. Maximum current for pulses as long as 1 second is higher but is dependent WW = Work Week on pulse duration and duty cycle. 5C668L = Device Code G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2018 Rev. 1 NTD5C668NL/D AYWW 5C 668LGNTD5C668NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 27 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 10 DSS J V = 0 V, GS V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 50 A 1.2 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.8 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 25 A 7.4 8.9 m DS(on) GS D V = 4.5 V, I = 25 A 10.2 12.8 GS D Forward Transconductance g V = 15 V, I = 25 A 60 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 1300 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 580 oss V = 25 V DS Reverse Transfer Capacitance C 18 rss Total Gate Charge Q nC V = 4.5 V 8.7 G(TOT) GS V = 30 V, DS I = 25 A D V = 10 V 18.7 GS Threshold Gate Charge Q 2.4 nC G(TH) GatetoSource Charge Q 4.1 GS V = 4.5 V, V = 30 V, GS DS I = 25 A GatetoDrain Charge Q D 2.0 GD Plateau Voltage V 3.1 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 12 ns d(on) Rise Time t 74 r V = 4.5 V, V = 30 V, GS DS I = 25 A, R = 2.5 TurnOff Delay Time t D G 26 d(off) Fall Time t 62 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, GS I = 20 A S T = 125C 0.76 J Reverse Recovery Time t 32 ns RR Charge Time ta 15 V = 0 V, dI /dt = 100 A/ s, GS S I = 25 A S Discharge Time tb 16 Reverse Recovery Charge Q 20 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2