MOSFET - Power, Single PChannel POWERTRENCH -40 V, -100 A, 4.4 m FDD9507L-F085 Features www.onsemi.com Typical R = 3.3 m at V = 10 V, I = 80 A DS(on) GS D Typical G = 110 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability V R MAX I MAX DSS DS(ON) D Qualified to AEC Q101 40 V 4.4 m 10 V 100 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers G Electrical Power Steering Integrated Starter/Alternator S Distributed Power Architectures and VRM P-CHANNEL MOSFET Primary Switch for 12 V Systems MAXIMUM RATINGS (T = 25C unless otherwise noted) A D Symbol Parameter Value Unit G V Drain-to-Source Voltage 40 V DSS S V Gate-to-Source Voltage 16 V GS DPAK3 (TO252) I Drain Current Continuous, 100 A CASE 369AS D (V = 10 V) T = 25C (Note 1) GS C Pulsed Drain Current, T = 25C (See Figure 4) A MARKING DIAGRAM C E Single Pulse Avalanche Energy 259 mJ AS (Note 2) P Power Dissipation 227 W D Y&Z&3&K Derate Above 25C 1.52 W/C FDD 9507L T , T Operating and Storage 55 to +175 C J STG Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. Y = ON Semiconductor Logo 2. Starting T = 25C, L = 0.1 mH, I = 72 A, V = 40 V during inductor J AS DD &Z = Assembly Plant Code charging and V = 0 V during time in avalanche. DD &3 = Numeric Date Code &K = Lot Code FDD9507L = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2021 Rev. 5 FDD9507LF085/DFDD9507L F085 THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case 0.66 C/W JC R Thermal Resistance, Junction to Ambient (Note 3) 52 JA 3. R is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain-to-Source Breakdown Voltage 40 V I = 250 A, V = 0 V DSS D GS I Drain-to-Source Leakage Current V = 40 V, V = 0 V DSS DS GS T = 25C 1 A J T = 175C (Note 4) 1 mA J I Gate-to-Source Leakage Current V = 16 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 1 2 3 V GS(th) GS DS D R Static Drain to Source On Resistance V = 4.5 V, I = 80 A, T = 25C 4.9 7.2 m DS(on) GS D J V = 10 V, I = 80 A GS D T = 25C 3.3 4.4 J T = 175C (Note 4) 5.3 7.1 J DYNAMIC CHARACTERISTICS V = 20 V, V = 0 V, f = 1 MHz C Input Capacitance 6250 pF iss DS GS C Output Capacitance 2640 pF oss C Reverse Transfer Capacitance 61 pF rss R Gate Resistance f = 1 MHz 19.3 g Q Total Gate Charge V = 0 V to 10 V, V = 20 V, I = 80 A 100 130 nC g(tot) GS DD D Q Total Gate Charge V = 0 V to 4.5 V, V = 20 V, I = 80 A 46 nC g(4.5) GS DD D Q Threshold Gate Charge V = 0 V to 2 V, V = 20 V, I = 80 A 13 nC g(th) GS DD D Q Gate to Source Charge V = 20 V, I = 80 A 22 nC gs DD D Q Gate to Drain Miller Charge V = 20 V, I = 80 A 13 nC gd DD D SWITCHING CHARACTERISTICS t Turn-On Time V = 20 V, I = 80 A, V = 10 V, 21 ns on DD D GS R = 6 GEN t Turn-On Delay 10 ns d(on) t Rise Time 6 ns r t Turn-Off Delay 400 ns d(off) t Fall Time 132 ns f t Turn-Off Time 710 ns off DRAIN-SOURCE DIODE CHARACTERISTICS V Source to Drain Diode Forward V I = 80 A, V = 0 V 0.9 1.3 SD SD GS Voltage I = 40 A, V = 0 V 0.85 1.2 SD GS t Reverse Recovery Time I = 80 A, dI /dt = 100 A/ s 87 113 ns rr F SD Q Reverse Recovery Charge 115 150 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production. J www.onsemi.com 2