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FDFMA2N028Z Integrated N-Channel PowerTrench MOSFET and Schottky Diode July 2014 FDFMA2N028Z Integrated N-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.7A, 68m Features General Description This device is designed specifically as a single package solution MOSFET for a boost topology in cellular handset and other ultra-portable Max r = 68m at V = 4.5V, I = 3.7A DS(on) GS D applications. It features a MOSFET with low on-state resistance, Max r = 86m at V = 2.5V, I = 3.3A and an independently connected schottky diode with low forward DS(on) GS D voltage. HBM ESD protection level > 2kV (Note 3) The MicroFET 2x2 package offers exceptional thermal Schottky performance for its physical size and is well suited to switching and linear mode applications. V < 0.37V 500mA F Low profile - 0.8 mm maximum - in the new package MicroFET Application 2x2 mm DC - DC Conversion RoHS Compliant Pin 1 D A NC 6 C A 1 5 NC 2 G 4 3 D S C S G MicroFET 2X2 MOSFET Maximum Ratings T = 25C unless otherwise noted J Symbol Parameter Ratings Units V Drain to Source Voltage 20 V DS V Gate to Source Voltage 12 V GS Drain Current -Continuous (Note 1a) 3.7 I A D -Pulsed 6 Power Dissipation (Note 1a) 1.4 P W D Power Dissipation (Note 1b) 0.7 T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG V Schottky Repetitive Peak Reverse Voltage 20 V RR I Schottky Average Forward Current 2 A O Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 86 JA R Thermal Resistance, Junction to Ambient (Note 1b) 173 JA C/W R Thermal Resistance, Junction to Ambient (Note 1c) 86 JA R Thermal Resistance, Junction to Ambient (Note 1d) 140 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .N28 FDFMA2N028Z MicroFET 2X2 7 8mm 3000 units 2008 Fairchild Semiconductor Corporation 1 FDFMA2N028Z Rev.B2 www.fairchildsemi.com